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| Author | Toledano-Luque, M.; Matagne, P.; Sibaja-Hernandez, A.; Chiarella, T.; Ragnarsson, L.-A.; Sorée, B.; Cho, M.; Mocuta, A.; Thean, A. | ||||
| Title | Superior reliability of junctionless pFinFETs by reduced oxide electric field | Type | A1 Journal article | ||
Year  |
2014 | Publication | IEEE electron device letters | Abbreviated Journal | Ieee Electr Device L |
| Volume | 35 | Issue | 12 | Pages | 1179-1181 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | Superior reliability of junctionless (JL) compared with inversion-mode field-effect transistors (FETs) is experimentally demonstrated on bulk FinFET wafers. The reduced negative bias temperature instability (NBTI) of JL pFETs outperforms the previously reported best NBTI reliability data obtained with Si channel devices and guarantees 10-year lifetime at typical operating voltages and high temperature. This behavior is understood through the reduced oxide electric field and lessened interaction between charge carriers and oxide traps during device operation. These findings encourage the investigation of JL devices with alternative channels as a promising alternative for 7-nm technology nodes meeting reliability targets. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Wos | 000345575400006 | Publication Date | 2014-10-21 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0741-3106;1558-0563; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 3.048 | Times cited | 13 | Open Access | |
| Notes | ; This work was supported by the imec's Core Partner Program. The review of this letter was arranged by Editor J. Schmitz. ; | Approved | Most recent IF: 3.048; 2014 IF: 2.754 | ||
| Call Number | UA @ lucian @ c:irua:122192 | Serial | 3378 | ||
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