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| Author | Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.; Stesmans, A. | ||||
| Title | Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 | Type | A1 Journal article | ||
Year  |
2012 | Publication | Nano Research | Abbreviated Journal | Nano Res |
| Volume | 5 | Issue | 1 | Pages | 43-48 |
| Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
| Abstract | The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS(2)) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS(2), the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS(2). | ||||
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| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Wos | 000299085200006 | Publication Date | 2011-11-10 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1998-0124;1998-0000; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 7.354 | Times cited | 407 | Open Access | |
| Notes | Approved | Most recent IF: 7.354; 2012 IF: 7.392 | |||
| Call Number | UA @ lucian @ c:irua:96262 | Serial | 3169 | ||
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