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| Record | |||||
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| Author | Peelaers, H.; Partoens, B.; Peeters, F.M. | ||||
| Title | Properties of B and P doped Ge nanowires | Type | A1 Journal article | ||
Year  |
2007 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 90 | Issue | Pages | 263103,1-3 | |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000247625500068 | Publication Date | 2007-06-25 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 3.411 | Times cited | 35 | Open Access | |
| Notes | Approved | Most recent IF: 3.411; 2007 IF: 3.596 | |||
| Call Number | UA @ lucian @ c:irua:69642 | Serial | 2728 | ||
| Permanent link to this record | |||||