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Author Wu, S.; Luo, X.; Turner, S.; Peng, H.; Lin, W.; Ding, J.; David, A.; Wang, B.; Van Tendeloo, G.; Wang, J.; Wu, T.;
Title Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures Type A1 Journal article
Year (down) 2013 Publication Physical review X Abbreviated Journal Phys Rev X
Volume 3 Issue 4 Pages 041027-14
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the unconventional bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.
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Corporate Author Thesis
Publisher Place of Publication College Park, Md Editor
Language Wos 000328862400001 Publication Date 2013-12-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2160-3308; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 12.789 Times cited 77 Open Access
Notes FWO;FP7;IFOX; Countatoms; Hercules Approved Most recent IF: 12.789; 2013 IF: 8.463
Call Number UA @ lucian @ c:irua:112524 Serial 2365
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