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| Author | de Keyser, A.; Bogaerts, R.; Karavolas, V.C.; van Bockstal, L.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. | ||||
| Title | Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs | Type | A1 Journal article | ||
Year  |
1996 | Publication | Solid state electronics | Abbreviated Journal | Solid State Electron |
| Volume | 40 | Issue | Pages | 395-398 | |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Oxford | Editor | ||
| Language | Wos | A1996UN20700083 | Publication Date | 2002-07-26 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0038-1101; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 1.504 | Times cited | 2 | Open Access | |
| Notes | Approved | no | |||
| Call Number | UA @ lucian @ c:irua:15817 | Serial | 1705 | ||
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