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| Author | Ovsyannikov, S.V.; Karkin, A.E.; Morozova, N.V.; Shchennikov, V.V.; Bykova, E.; Abakumov, A.M.; Tsirlin, A.A.; Glazyrin, K.V.; Dubrovinsky, L. | ||||
| Title | A hard oxide semiconductor with a direct and narrow bandgap and switchable pn electrical conduction | Type | A1 Journal article | ||
Year  |
2014 | Publication | Advanced materials | Abbreviated Journal | Adv Mater |
| Volume | 26 | Issue | 48 | Pages | 8185-8191 |
| Keywords | A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) | ||||
| Abstract | An oxide semiconductor (perovskite-type Mn2O3) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors. | ||||
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| Publisher | Place of Publication | Weinheim | Editor | ||
| Language | Wos | 000346480800016 | Publication Date | 2014-10-27 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0935-9648; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 19.791 | Times cited | 27 | Open Access | |
| Notes | Approved | Most recent IF: 19.791; 2014 IF: 17.493 | |||
| Call Number | UA @ lucian @ c:irua:122230 | Serial | 1408 | ||
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