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| Author | Shields, P.A.; Nicholas, R.J.; Peeters, F.M.; Beaumont, B.; Gibart, P. | ||||
| Title | Free-carrier effects in gallium nitride epilayers: Valence-band dispersion | Type | A1 Journal article | ||
Year  |
2001 | Publication | Physical Review B | Abbreviated Journal | Phys Rev B |
| Volume | 64 | Issue | 8 | Pages | 155303 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | The dispersion of the A-valence-band in GaN has been deduced from the observation of high-index magnetoexcitonic states in polarized interband magnetoreflectivity and is found to be strongly nonparabolic with a mass in the range 1.2-1.8m(e). It matches the theory of Kim et al. [Phys. Rev. B 56, 7363 (1997)] extremely well, which also gives a strong k-dependent A-valence-band mass. A strong phonon coupling leads to quenching of the observed transitions at about an LO-phonon energy above the band gap and a strong nonparabolicity. The valence band was deduced from subtracting from the reduced dispersion the electron contribution with a model that includes a full treatment of the electron-phonon interaction. | ||||
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| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Lancaster, Pa | Editor | ||
| Language | Wos | 000170623000005 | Publication Date | 2002-07-27 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0163-1829;1095-3795; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 3.836 | Times cited | 13 | Open Access | |
| Notes | Approved | Most recent IF: 3.836; 2001 IF: NA | |||
| Call Number | UA @ lucian @ c:irua:37288 | Serial | 1274 | ||
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