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| Author | Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K. | ||||
| Title | First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts | Type | A1 Journal article | ||
Year  |
2005 | Publication | Microelectronic engineering | Abbreviated Journal | Microelectron Eng |
| Volume | 80 | Issue | Pages | 272-279 | |
| Keywords | A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
| Abstract | The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization. | ||||
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| Publisher | Place of Publication | Amsterdam | Editor | ||
| Language | Wos | 000231517000062 | Publication Date | 2005-06-05 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0167-9317; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 1.806 | Times cited | 31 | Open Access | |
| Notes | Approved | Most recent IF: 1.806; 2005 IF: 1.347 | |||
| Call Number | UA @ lucian @ c:irua:95095 | Serial | 1199 | ||
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