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Author |
Sun, P.Z.; Yagmurcukardes, M.; Zhang, R.; Kuang, W.J.; Lozada-Hidalgo, M.; Liu, B.L.; Cheng, H.-M.; Wang, F.C.; Peeters, F.M.; Grigorieva, I.V.; Geim, A.K. |
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Title |
Exponentially selective molecular sieving through angstrom pores |
Type |
A1 Journal article |
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Year  |
2021 |
Publication |
Nature Communications |
Abbreviated Journal |
Nat Commun |
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Volume |
12 |
Issue |
1 |
Pages |
7170 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT) |
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Abstract |
Two-dimensional crystals with angstrom-scale pores are widely considered as candidates for a next generation of molecular separation technologies aiming to provide extreme, exponentially large selectivity combined with high flow rates. No such pores have been demonstrated experimentally. Here we study gas transport through individual graphene pores created by low intensity exposure to low kV electrons. Helium and hydrogen permeate easily through these pores whereas larger species such as xenon and methane are practically blocked. Permeating gases experience activation barriers that increase quadratically with molecules' kinetic diameter, and the effective diameter of the created pores is estimated as similar to 2 angstroms, about one missing carbon ring. Our work reveals stringent conditions for achieving the long sought-after exponential selectivity using porous two-dimensional membranes and suggests limits on their possible performance. Two-dimensional membranes with angstrom-sized pores are predicted to combine high permeability with exceptional selectivity, but experimental demonstration has been challenging. Here the authors realize angstrom-sized pores in monolayer graphene and demonstrate gas transport with activation barriers increasing quadratically with the molecular kinetic diameter. |
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Publisher |
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Place of Publication |
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Wos |
000728562700016 |
Publication Date |
2021-12-09 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2041-1723 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
12.124 |
Times cited |
10 |
Open Access |
OpenAccess |
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Notes |
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Approved |
Most recent IF: 12.124 |
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Call Number |
UA @ admin @ c:irua:184840 |
Serial |
6989 |
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Author |
Wang, F.; Wang, C.; Chaves, A.; Song, C.; Zhang, G.; Huang, S.; Lei, Y.; Xing, Q.; Mu, L.; Xie, Y.; Yan, H. |
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Title |
Prediction of hyperbolic exciton-polaritons in monolayer black phosphorus |
Type |
A1 Journal article |
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Year |
2021 |
Publication |
Nature Communications |
Abbreviated Journal |
Nat Commun |
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Volume |
12 |
Issue |
1 |
Pages |
5628 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT) |
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Abstract |
Hyperbolic polaritons exhibit large photonic density of states and can be collimated in certain propagation directions. The majority of hyperbolic polaritons are sustained in man-made metamaterials. However, natural-occurring hyperbolic materials also exist. Particularly, natural in-plane hyperbolic polaritons in layered materials have been demonstrated in MoO3 and WTe2, which are based on phonon and plasmon resonances respectively. Here, by determining the anisotropic optical conductivity (dielectric function) through optical spectroscopy, we predict that monolayer black phosphorus naturally hosts hyperbolic exciton-polaritons due to the pronounced in-plane anisotropy and strong exciton resonances. We simultaneously observe a strong and sharp ground state exciton peak and weaker excited states in high quality monolayer samples in the reflection spectrum, which enables us to determine the exciton binding energy of similar to 452 meV. Our work provides another appealing platform for the in-plane natural hyperbolic polaritons, which is based on excitons rather than phonons or plasmons. |
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Wos |
000698984500003 |
Publication Date |
2021-10-12 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2041-1723 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
12.124 |
Times cited |
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Open Access |
Not_Open_Access |
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Notes |
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Approved |
Most recent IF: 12.124 |
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Call Number |
UA @ admin @ c:irua:191688 |
Serial |
8404 |
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Author |
Wang, F.; Gao, T.; Zhang, Q.; Hu, Z.-Y.; Jin, B.; Li, L.; Zhou, X.; Li, H.; Van Tendeloo, G.; Zhai, T. |
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Title |
Liquid-alloy-assisted growth of 2D ternaryGa2In4S9 toward high-performance UV photodetection |
Type |
A1 Journal article |
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Year |
2019 |
Publication |
Advanced materials |
Abbreviated Journal |
Adv Mater |
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Volume |
31 |
Issue |
2 |
Pages |
1806306 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
2D ternary systems provide another degree of freedom of tuning physical properties through stoichiometry variation. However, the controllable growth of 2D ternary materials remains a huge challenge that hinders their practical applications. Here, for the first time, by using a gallium/indium liquid alloy as the precursor, the synthesis of high-quality 2D ternary Ga2In4S9 flakes of only a few atomic layers thick (approximate to 2.4 nm for the thinnest samples) through chemical vapor deposition is realized. Their UV-light-sensing applications are explored systematically. Photodetectors based on the Ga2In4S9 flakes display outstanding UV detection ability (R-lambda = 111.9 A W-1, external quantum efficiency = 3.85 x 10(4)%, and D* = 2.25 x 10(11) Jones@360 nm) with a fast response speed (tau(ring) approximate to 40 ms and tau(decay) approximate to 50 ms). In addition, Ga2In4S9-based phototransistors exhibit a responsivity of approximate to 10(4) A W-1@360 nm above the critical back-gate bias of approximate to 0 V. The use of the liquid alloy for synthesizing ultrathin 2D Ga2In4S9 nanostructures may offer great opportunities for designing novel 2D optoelectronic materials to achieve optimal device performance. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Wos |
000455111100013 |
Publication Date |
2018-11-09 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0935-9648 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
19.791 |
Times cited |
29 |
Open Access |
Not_Open_Access |
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Notes |
; F.K.W., T.G, and Q.Z. contributed equally to this work. The authors acknowledge the support from National Nature Science Foundation of China (21825103, 51727809, 51472097, 91622117, and 51872069), National Basic Research Program of China (2015CB932600), and the Fundamental Research Funds for the Central Universities (2017KFKJXX007, 2015ZDTD038, 2017III055, and 2018III039GX). The authors thank the Analytical and Testing Centre of Huazhong University of Science and Technology. ; |
Approved |
Most recent IF: 19.791 |
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Call Number |
UA @ admin @ c:irua:156756 |
Serial |
5254 |
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Author |
Ren, Z.; Wu, M.; Chen, X.; Li, W.; Li, M.; Wang, F.; Tian, H.; Chen, J.; Xie, Y.; Mai, J.; Li, X.; Lu, X.; Lu, Y.; Zhang, H.; Van Tendeloo, G.; Zhang, Z.; Han, G. |
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Title |
Electrostatic force-driven oxide heteroepitaxy for interface control |
Type |
A1 Journal article |
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Year |
2018 |
Publication |
Advanced materials |
Abbreviated Journal |
Adv Mater |
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Volume |
30 |
Issue |
38 |
Pages |
1707017 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low-temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid-liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Weinheim |
Editor |
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Language |
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Wos |
000444671900002 |
Publication Date |
2018-08-07 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0935-9648 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
19.791 |
Times cited |
4 |
Open Access |
Not_Open_Access |
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Notes |
; Z.H.R., M.J.W., and X.C. contributed equally to this work. This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 51232006, 51472218, 11474249, 61574123, 11374009, and 11234011), the National 973 Program of China (Grant No. 2015CB654901), National Young 1000 Talents Program of China, the Fundamental Research Funds for the Central Universities (Grant No. 2017FZA4008), and the 111 Project under Grant No. B16042. J.M. and X.L. gratefully thank the beam time and technical supports provided by 23A SWAXS beamline at NSRRC, Hsinchu. ; |
Approved |
Most recent IF: 19.791 |
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Call Number |
UA @ lucian @ c:irua:153628 |
Serial |
5098 |
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