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Author |
Meng, X.; Chen, S.; Peng, H.; Bai, H.; Zhang, S.; Su, X.; Tan, G.; Van Tendeloo, G.; Sun, Z.; Zhang, Q.; Tang, X.; Wu, J. |
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Title |
Ferroelectric engineering : enhanced thermoelectric performance by local structural heterogeneity |
Type |
A1 Journal article |
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Year  |
2022 |
Publication |
Science China : materials |
Abbreviated Journal |
Sci China Mater |
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Pages |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Although traditional ferroelectric materials are usually dielectric and nonconductive, GeTe is a typical ferroelectric semiconductor, possessing both ferroelectric and semiconducting properties. GeTe is also a widely studied thermoelectric material, whose performance has been optimized by doping with various elements. However, the impact of the ferroelectric domains on the thermoelectric properties remains unclear due to the difficulty to directly observe the ferroelectric domains and their evolutions under actual working conditions where the material is exposed to high temperatures and electric currents. Herein, based on in-situ investigations of the ferroelectric domains and domain walls in both pure and Sb-doped GeTe crystals, we have been able to analyze the dynamic evolution of the ferroelectric domains and domain walls, exposed to an electric field and temperature. Local structural heterogeneities and nano-sized ferroelectric domains are generated due to the interplay of the Sb3+ dopant and the Ge-vacancies, leading to the increased number of charged domain walls and a much improved thermoelectric performance. This work reveals the fundamental mechanism of ferroelectric thermoelectrics and provides insights into the decoupling of previously interdependent properties such as thermo-power and electrical conductivity. |
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Wos |
000749973500001 |
Publication Date |
2022-02-02 |
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Series Issue |
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Edition |
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ISSN |
2095-8226; 2199-4501 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
8.1 |
Times cited |
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Open Access |
Not_Open_Access |
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Notes |
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Approved |
Most recent IF: 8.1 |
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Call Number |
UA @ admin @ c:irua:186429 |
Serial |
6959 |
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Author |
Liang, Q.; Yang, D.; Xia, F.; Bai, H.; Peng, H.; Yu, R.; Yan, Y.; He, D.; Cao, S.; Van Tendeloo, G.; Li, G.; Zhang, Q.; Tang, X.; Wu, J. |
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Title |
Phase-transformation-induced giant deformation in thermoelectric Ag₂Se semiconductor |
Type |
A1 Journal article |
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Year |
2021 |
Publication |
Advanced Functional Materials |
Abbreviated Journal |
Adv Funct Mater |
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Issue |
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Pages |
2106938 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
In most semiconducting metal chalcogenides, a large deformation is usually accompanied by a phase transformation, while the deformation mechanism remains largely unexplored. Herein, a phase-transformation-induced deformation in Ag2Se is investigated by in situ transmission electron microscopy, and a new ordered high-temperature phase (named as alpha '-Ag2Se) is identified. The Se-Se bonds are folded when the Ag+-ion vacancies are ordered and become stretched when these vacancies are disordered. Such a stretch/fold of the Se-Se bonds enables a fast and large deformation occurring during the phase transition. Meanwhile, the different Se-Se bonding states in alpha-, alpha '-, beta-Ag2Se phases lead to the formation of a large number of nanoslabs and the high concentration of dislocations at the interface, which flexibly accommodate the strain caused by the phase transformation. This study reveals the atomic mechanism of the deformation in Ag2Se inorganic semiconductors during the phase transition, which also provides inspiration for understanding the phase transition process in other functional materials. |
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Wos |
000695142800001 |
Publication Date |
2021-09-13 |
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ISSN |
1616-301x |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
12.124 |
Times cited |
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Open Access |
Not_Open_Access |
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Notes |
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Approved |
Most recent IF: 12.124 |
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Call Number |
UA @ admin @ c:irua:181527 |
Serial |
6879 |
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Author |
Tang, X.; Reckinger, N.; Poncelet, O.; Louette, P.; Urena, F.; Idrissi, H.; Turner, S.; Cabosart, D.; Colomer, J.-F.; Raskin, J.-P.; Hackens, B.; Francis, L.A. |
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Title |
Damage evaluation in graphene underlying atomic layer deposition dielectrics |
Type |
A1 Journal article |
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Year |
2015 |
Publication |
Scientific reports |
Abbreviated Journal |
Sci Rep-Uk |
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Volume |
5 |
Issue |
5 |
Pages |
13523 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
Based on micro-Raman spectroscopy (muRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, muRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors. |
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Address |
ICTEAM Institute, Universite catholique de Louvain, Place du Levant 3, 1348 Louvain-la-Neuve, Belgium |
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Language |
English |
Wos |
000360147400001 |
Publication Date |
2015-08-27 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2045-2322; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
4.259 |
Times cited |
18 |
Open Access |
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Notes |
The authors thank the staff of UCL’s Winfab and Welcome for technical support. Xiaohui Tang is a senior research of UCL. This work is financially supported by the Multi-Sensor-Platform for Smart Building Management project (No. 611887) and the Action de Recherche Concertée (ARC) “StressTronics”, Communauté française de Belgique. Part of this work is financially supported by the Belgian Fund for Scientific Research (FRS-FNRS) under FRFC contract “Chemographene” (No. 2.4577.11). J.-F. Colomer and B. Hackens are Research Associates of FRS-FNRS. This research used resources of the Electron Microscopy Service located at the University of Namur (“Plateforme Technologique Morphologie – Imagerie”). This research used resources of the ELISE Service of the University of Namur. This Service is member of the “Plateforme Technologique SIAM”. The research leading to this work has received partial funding from the European Union Seventh Framework Program under grant agreement No 604391 Graphene Flagship. |
Approved |
Most recent IF: 4.259; 2015 IF: 5.578 |
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Call Number |
c:irua:129193 |
Serial |
3958 |
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