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Author Krstajic, P.; Peeters, F.M. url  doi
openurl 
  Title Spin-dependent tunneling in diluted magnetic semiconductor trilayer structures Type A1 Journal article
  Year (down) 2005 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 72 Issue 12 Pages 125350-125356  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Tunneling of holes through a trilayer structure made of two diluted magnetic semiconductors, (Ga,Mn)As, separated by a thin layer of nonmagnetic AlAs is investigated. The problem is treated within the 6x6 Luttinger-Kohn model for valence bands with the split-off band included. The influence of the spin-orbit coupling is pronounced as the spin-splitting Delta(ex) is comparable with the split-off Delta(SO) splitting. It is assumed that direct tunneling is the dominant mechanism due to the high quality of the tunnel junctions. Our theoretical results predict the correct order of magnitude for the tunneling magnetoresistance ratio, but various other effects, such as scattering on impurities and defects, should be included in order to realize a quantitative agreement with experiment.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000232229400116 Publication Date 2005-09-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 8 Open Access  
  Notes Approved Most recent IF: 3.836; 2005 IF: 3.185  
  Call Number UA @ lucian @ c:irua:104068 Serial 3086  
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Author Fleurov, V.; Kikoin, K.; Ivanov, V.A.; Krstajic, P.M.; Peeters, F.M. doi  openurl
  Title Mechanisms of double magnetic exchange in dilute magnetic semiconductors Type A1 Journal article
  Year (down) 2004 Publication Journal of magnetism and magnetic materials T2 – International Conference on Magnetism (ICM 2003), JUL 27-AUG 01, 2003, Rome, ITALY Abbreviated Journal J Magn Magn Mater  
  Volume 272 Issue Part 3 Pages 1967-1968  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract A microscopic Hamiltonian for interacting manganese impurities in dilute magnetic semiconductors (DMS) is derived. It is shown that in p-type III-V DMS, the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile and localized holes near the top of the valence band play the role of unoccupied p-orbitals which induce ferromagnetism. T-C estimated from the proposed kinematic exchange agrees with experiments on (Ga,Mn)As. The model is also applicable to the p-doped (Ga,Mn)P system. The magnetic ordering in n-type (Ga,Mn)N is due to exchange between the electrons localized on the levels lying deep in the forbidden energy gap. This mechanism is even closer to the original Zener mechanism. (C) 2003 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000222236800142 Publication Date 2004-01-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-8853; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.63 Times cited 12 Open Access  
  Notes Approved Most recent IF: 2.63; 2004 IF: 1.031  
  Call Number UA @ lucian @ c:irua:103233 Serial 1981  
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Author Krstajic, P.M.; Ivanov, V.A.; Peeters, F.M.; Fleurov, V.; Kikoin, K. doi  openurl
  Title On the nature of ferromagnetism in diluted magnetic semiconductors : GaAs:Mn Type A1 Journal article
  Year (down) 2003 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett  
  Volume 61 Issue 2 Pages 235-241  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract An energy level diagram is constructed on the basis of a microscopic Hamiltonian proposed for a description of interacting manganese impurities in diluted magnetic semiconductors (DMS). It is shown that ferromagnetism in p-type III-V DMS is governed by the strong hybridization of Mn2+-electrons with the mobile holes and localized states near the top of the valence band. The Curie temperature estimated from the proposed kinematic exchange agrees with the experiments on GaAs:Mn. The model is also applicable to the GaP:Mn system.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Paris Editor  
  Language Wos 000180283200015 Publication Date 2003-12-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.957 Times cited 38 Open Access  
  Notes Approved Most recent IF: 1.957; 2003 IF: 2.075  
  Call Number UA @ lucian @ c:irua:103318 Serial 2443  
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Author Krstajic, P.M.; Ivanov, V.A.; Peeters, F.M.; Fleurov, V.; Kikoin, K. pdf  doi
openurl 
  Title Ferromagnetism in Mn-doped GaAs : the kinematic exchange Type A1 Journal article
  Year (down) 2003 Publication Journal of superconductivity T2 – PASPS Conference 2002, JUL, 2002, WURZBURG, GERMANY Abbreviated Journal J Supercond  
  Volume 16 Issue 1 Pages 111-113  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We developed a microscopic model in order to describe the onset of ferromagnetism (FM) in GaAs:Mn. The proposed kinematic mechanism bears resemblances with the Zener exchange. The calculated Curie temperature for GaAs: Mn is in good agreement with available experimental data of the Curie temperature as a function of the manganese concentration.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000182060400027 Publication Date 2003-06-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0896-1107; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 2 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103314 Serial 1183  
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Author Ivanov, V.A.; Krstajic, P.M.; Peeters, F.M.; Fleurov, V.; Kikoin, K. pdf  doi
openurl 
  Title On the nature of ferromagnetism in dilute magnetic semiconductors : GaAs:Mn and GaP:Mn Type A1 Journal article
  Year (down) 2003 Publication Journal of magnetism and magnetic materials T2 – 2nd Moscow International Symposium on Magnetism (MISM 2001), JUN 20-24, 2001, MOSCOW STATE UNIV, MOSCOW, RUSSIA Abbreviated Journal J Magn Magn Mater  
  Volume 258 Issue Pages 237-240  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract On the basis of a simplified Hamiltonian for transition metal impurities in diluted magnetic semiconductors (DMS), the nature of ferromagnetism in p-type III-V DMS are investigated. Ferromagnetism is governed by the Anderson-Hubbard parameter for 3d electrons of Mn2+ and their strong hybridization with the hole carriers in the semiconducting medium. The origin of ferromagnetism in these materials has similarity with the Zener mechanism. From the energetically preferable parallel orientation of Mn spins the Curie temperature is calculated for GaAs:Mn. (C) 2002 Published by Elsevier Science B.V.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000181702000062 Publication Date 2003-03-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-8853; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.63 Times cited 10 Open Access  
  Notes Approved Most recent IF: 2.63; 2003 IF: 0.910  
  Call Number UA @ lucian @ c:irua:103311 Serial 2442  
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Author Ivanov, V.A.; Krstajic, P.M.; Peeters, F.M.; Fleurov, V.; Kikoin, K. pdf  doi
openurl 
  Title On the ferromagnetic exchange in Mn-doped III-V semiconductors Type A1 Journal article
  Year (down) 2003 Publication Physica: B : condensed matter T2 – 23rd International Conference on Low Temperature Physics (LT23), AUG 20-27, 2002, HIROSHIMA, JAPAN Abbreviated Journal Physica B  
  Volume 329 Issue Part 2 Pages 1282-1283  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We propose a microscopic model for double exchange in GaAs:Mn, GaP:Mn which is based on the interaction between the transition metal impurities and the heavy holes of host semiconductor. The kinematic exchange is derived and the Curie temperature is calculated which agrees with recent experiments. (C) 2003 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000183802700400 Publication Date 2003-02-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.386 Times cited 5 Open Access  
  Notes Approved Most recent IF: 1.386; 2003 IF: 0.908  
  Call Number UA @ lucian @ c:irua:103813 Serial 2435  
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