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Author |
Do, M.T.; Gauquelin, N.; Nguyen, M.D.; Blom, F.; Verbeeck, J.; Koster, G.; Houwman, E.P.; Rijnders, G. |
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Title |
Interface degradation and field screening mechanism behind bipolar-cycling fatigue in ferroelectric capacitors |
Type |
A1 Journal article |
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Year  |
2021 |
Publication |
Apl Materials |
Abbreviated Journal |
Apl Mater |
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Volume |
9 |
Issue |
2 |
Pages |
021113 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
Polarization fatigue, i.e., the loss of polarization of ferroelectric capacitors upon field cycling, has been widely discussed as an interface related effect. However, mechanism(s) behind the development of fatigue have not been fully identified. Here, we study the fatigue mechanisms in Pt/PbZr0.52Ti0.48O3/SrRuO3 (Pt/PZT/SRO) capacitors in which all layers are fabricated by pulsed laser deposition without breaking the vacuum. With scanning transmission electron microscopy, we observed that in the fatigued capacitor, the Pt/PZT interface becomes structurally degraded, forming a 5 nm-10 nm thick non-ferroelectric layer of crystalline ZrO2 and diffused Pt grains. We then found that the fatigued capacitors can regain the full initial polarization switching if the externally applied field is increased to at least 10 times the switching field of the pristine capacitor. These findings suggest that polarization fatigue is driven by a two-step mechanism. First, the transient depolarization field that repeatedly appears during the domain switching under field cycling causes decomposition of the metal/ferroelectric interface, resulting in a non-ferroelectric degraded layer. Second, this interfacial non-ferroelectric layer screens the external applied field causing an increase in the coercive field beyond the usually applied maximum field and consequently suppresses the polarization switching in the cycled capacitor. Our work clearly confirms the key role of the electrode/ferroelectric interface in the endurance of ferroelectric-based devices. |
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Wos |
000630052100006 |
Publication Date |
2021-02-09 |
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ISSN |
2166-532x |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
4.335 |
Times cited |
5 |
Open Access |
OpenAccess |
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Notes |
This work was supported by the Nederlandse Organisatie voor Wetenschappelijk Onderzoek through Grant No. F62.3.15559. The Qu-Ant-EM microscope and the direct electron detector were partly funded by the Hercules fund from the Flemish Government. N.G. and J.V. acknowledge funding from the GOA project “Solarpaint” of the University of Antwerp. This work has also received funding from the European Union's Horizon 2020 research and innovation program under Grant No. 823717-ESTEEM3. We acknowledge D. Chezganov for his useful insights. |
Approved |
Most recent IF: 4.335 |
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Call Number |
UA @ admin @ c:irua:177663 |
Serial |
6783 |
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Author |
Do, M.T.; Gauquelin, N.; Nguyen, M.D.; Wang, J.; Verbeeck, J.; Blom, F.; Koster, G.; Houwman, E.P.; Rijnders, G. |
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Title |
Interfacial dielectric layer as an origin of polarization fatigue in ferroelectric capacitors |
Type |
A1 Journal article |
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Year |
2020 |
Publication |
Scientific Reports |
Abbreviated Journal |
Sci Rep-Uk |
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Volume |
10 |
Issue |
1 |
Pages |
7310 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
Origins of polarization fatigue in ferroelectric capacitors under electric field cycling still remain unclear. Here, we experimentally identify origins of polarization fatigue in ferroelectric PbZr0.52Ti0.48O3 (PZT) thin-film capacitors by investigating their fatigue behaviours and interface structures. The PZT layers are epitaxially grown on SrRuO3-buffered SrTiO3 substrates by a pulsed laser deposition (PLD), and the capacitor top-electrodes are various, including SrRuO3 (SRO) made by in-situ PLD, Pt by in-situ PLD (Pt-inPLD) and ex-situ sputtering (Pt-sputtered). We found that fatigue behaviour of the capacitor is directly related to the top-electrode/PZT interface structure. The Pt-sputtered/PZT/SRO capacitor has a thin defective layer at the top interface and shows early fatigue while the Pt-inPLD/PZT/SRO and SRO/PZT/SRO capacitor have clean top-interfaces and show much more fatigue resistance. The defective dielectric layer at the Pt-sputtered/PZT interface mainly contains carbon contaminants, which form during the capacitor ex-situ fabrication. Removal of this dielectric layer significantly delays the fatigue onset. Our results clearly indicate that dielectric layer at ferroelectric capacitor interfaces is the main origin of polarization fatigue, as previously proposed in the charge injection model. |
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Wos |
000559953800003 |
Publication Date |
2020-04-30 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2045-2322 |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
4.6 |
Times cited |
18 |
Open Access |
OpenAccess |
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Notes |
; The authors acknowledge the financial support of the Nederlandse Organisatie voor Wetenschappelijk Onderzoek through Grant No. F62.3.15559. ; |
Approved |
Most recent IF: 4.6; 2020 IF: 4.259 |
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Call Number |
EMAT @ emat @c:irua:169865 |
Serial |
6374 |
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Author |
Valkering, A.M.C.; Sommerfeld, P.K.H.; van de Ven, R.A.M.; van der Heijden, R.W.; Blom, F.A.P.; Lea, M.J.; Peeters, F.M. |
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Title |
Hall magnetocapitance in two-dimensional electron systems |
Type |
A1 Journal article |
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Year |
1998 |
Publication |
Physical review letters |
Abbreviated Journal |
Phys Rev Lett |
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Volume |
81 |
Issue |
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Pages |
5398-5401 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Place of Publication |
New York, N.Y. |
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Wos |
000077511700036 |
Publication Date |
2002-07-27 |
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ISSN |
0031-9007;1079-7114; |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
8.462 |
Times cited |
4 |
Open Access |
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Notes |
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Approved |
Most recent IF: 8.462; 1998 IF: 6.017 |
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Call Number |
UA @ lucian @ c:irua:24153 |
Serial |
1402 |
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Author |
Blom, F.A.P.; Peeters, F.M.; van de Zanden, K.; van Hove, M. |
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Title |
Magneto-oscillations of the gate current in a laterally modulated two-dimensional electron gas |
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A1 Journal article |
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Year |
1996 |
Publication |
Surface science : a journal devoted to the physics and chemistry of interfaces |
Abbreviated Journal |
Surf Sci |
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Volume |
361/362 |
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Pages |
851-854 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Place of Publication |
Amsterdam |
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A1996UZ03300202 |
Publication Date |
2002-07-26 |
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ISSN |
0039-6028; |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.925 |
Times cited |
1 |
Open Access |
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Notes |
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no |
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Call Number |
UA @ lucian @ c:irua:15812 |
Serial |
1905 |
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