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“Self-directed localization of ZIF-8 thin film formation by conversion of ZnO nanolayers”. Khaletskaya K, Turner S, Tu M, Wannapaiboon S, Schneemann A, Meyer R, Ludwig A, Van Tendeloo G, Fischer RA, Advanced functional materials 24, 4804 (2014). http://doi.org/10.1002/adfm.201400559
Abstract: Control of localized metal-organic framework (MOF) thin film formation is a challenge. Zeolitic imidazolate frameworks (ZIFs) are an important sub-class of MOFs based on transition metals and imidazolate linkers. Continuous coatings of intergrown ZIF crystals require high rates of heterogeneous nucleation. In this work, substrates coated with zinc oxide layers are used, obtained by atomic layer deposition (ALD) or by magnetron sputtering, to provide the Zn2+ ions required for nucleation and localized growth of ZIF-8 films ([Zn(mim)(2)]; Hmim = 2-methylimidazolate). The obtained ZIF-8 films reveal the expected microporosity, as deduced from methanol adsorption studies using an environmentally controlled quartz crystal microbalance (QCM) and comparison with bulk ZIF-8 reference data. The concept is transferable to other MOFs, and is applied to the formation of [Al(OH)(1,4-ndc)](n) (ndc = naphtalenedicarboxylate) thin films derived from Al2O3 nanolayers.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 77
DOI: 10.1002/adfm.201400559
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“Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures”. Wu S, Luo X, Turner S, Peng H, Lin W, Ding J, David A, Wang B, Van Tendeloo G, Wang J, Wu T;, Physical review X 3, 041027 (2013). http://doi.org/10.1103/PhysRevX.3.041027
Abstract: Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the unconventional bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.789
Times cited: 77
DOI: 10.1103/PhysRevX.3.041027
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“Carbon and nitrogen 1s energy levels in amorphous carbon nitride systems: XPS interpretation using first-principles”. Titantah JT, Lamoen D, Diamond And Related Materials 16, 581 (2007). http://doi.org/10.1016/j.diamond.2006.11.048
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 2.561
Times cited: 77
DOI: 10.1016/j.diamond.2006.11.048
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“Synthesis of multi-branched porous carbon nanofibers and their application in electrochemical double-layer capacitors”. Tao XY, Zhang XB, Zhang L, Cheng JP, Liu F, Luo JH, Luo ZQ, Geise HJ, Carbon 44, 1425 (2006). http://doi.org/10.1016/j.carbon.2005.11.024
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.337
Times cited: 77
DOI: 10.1016/j.carbon.2005.11.024
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“Binding energies of positive and negative trions: From quantum wells to quantum dots”. Bracker AS, Stinaff EA, Gammon D, Ware ME, Tischler JG, Park D, Gershoni D, Filinov AV, Bonitz M, Peeters F, Riva C, Physical review : B : condensed matter and materials physics 72, 035332 (2005). http://doi.org/10.1103/PhysRevB.72.035332
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 77
DOI: 10.1103/PhysRevB.72.035332
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“Influence of well-width fluctuations on the binding energy of excitons, charged excitons, and biexcitons in GaAs-based quantum wells”. Filinov AV, Riva C, Peeters FM, Lozovik YE, Bonitz M, Physical review : B : condensed matter and materials physics 70, 035323 (2004). http://doi.org/10.1103/PhysRevB.70.035323
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 77
DOI: 10.1103/PhysRevB.70.035323
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“Renormalized perturbation series for quantum dots”. Matulis A, Peeters FM, Journal of physics : condensed matter 6, 7751 (1994). http://doi.org/10.1088/0953-8984/6/38/013
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.346
Times cited: 77
DOI: 10.1088/0953-8984/6/38/013
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“Far-infrared spectroscopy of minibands and confined donors in GaAs/AlxGa1-xAs superlattices”. Helm M, Peeters FM, DeRosa F, Colas E, Harbison JP, Florez LT, Physical review : B : condensed matter and materials physics 43, 13983 (1991)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 77
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