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	“The formation of 3C-SiC in crystalline Si by carbon implantation at 950⁰C and annealing: a structural study”. Frangis N, Stoemenos J, van Landuyt J, Nejim A, Hemment PLF, Journal of crystal growth 181, 218 (1997) Keywords: A1 Journal article; Electron microscopy for materials research (EMAT) Impact Factor: 1.751 Times cited: 9 Additional Links: UA library record; WoS full record; WoS citing articles Permanent link \| Save citation: RTF PDF LaTeX \| Export record: BibTeX Endnote ISI RIS Word XML

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