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“Present state of the composition evaluation of ternary semiconductor nanostructures by lattice fringe analysis”. Rosenauer A, Gerthsen D, Van Aert S, van Dyck D, den Dekker AJ, Institute of physics conference series , 19 (2003)
Abstract: Semiconductor heterostructures are used for the fabrication of optoelectronic devices. Performance of such devices is governed by their chemical morphology. The composition distribution of quantum wells and dots is influenced by kinetic growth processes which are not understood completely at present. To obtain more information about these effects, methods for composition determination with a spatial resolution at a near atomic scale are necessary. In this paper we focus on the present state of the composition evaluation by the lattice fringe analysis (CELFA) technique and explain the basic ideas, optimum imaging conditions, precision and accuracy.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
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“Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation”. Stuer C, Steegen A, van Landuyt J, Bender H, Maex K, Institute of physics conference series , 481 (2001)
Abstract: With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Structural aspects of the combination of Si and YBa2Cu3O7-x”. Vasiliev AL, Van Tendeloo G, Boikov Y, Olsson E, Ivanov Z, Claeson T, Kiselev NA, Institute of physics conference series 146, 333 (1995)
Abstract: The microstructure of defects and interfaces as well as interfacial reactions of the YBa2Cu3O7-x (YBCO) thin films on Si or Si on sapphire with single Y-stabilized ZrO2 (YSZ), double CeO2/YSZ or triple MgO/CeO2/YSZ buffer layer has been characterized by transmission electron microscopy The complex buffer made it possible to prevent detrimental interdiffusion and to control the orientation of YBCO layers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Towards quantitative high resolution electron microscopy?”.Van Tendeloo G, op de Beeck M, De Meulenaere P, van Dyck D, Institute of physics conference series 147, 67 (1995)
Abstract: The basics of the interpretation of high resolution images showing detail of the order of 0.1 nm are shortly explained here. The use of a field emission source, a CCD camera and an adapted reconstruction method for restoring the projected crystal potential (focus variation method) allows a quantitative interpretation of HREM images. Examples of partially disordered alloys and carbonate ordering in high Tc superconductors are presented.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
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“X-ray optics for synchrotron-radiation-induced X-ray micro fluorescence at the european synchrotron-radiation facility, Grenoble”. Vincze L, Janssens K, Adams F, Institute of physics conference series , 613 (1993)
Abstract: Different optical designs for generating synchrotron x-ray micro beams suitable for use in an X-ray fluorescence microscope using an ESRF bending magnet X-ray source are compared. Attention is devoted to the spatial and energy distribution of the photons in the micro beam and to the minimum detection limits that are achievable with each alternative optical system.
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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