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Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. openurl 
  Title Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation Type A1 Journal article
  Year (down) 1999 Publication Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND Abbreviated Journal Inst Phys Conf Ser  
  Volume Issue 164 Pages 495-498  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000166835300106 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0650-5; 0951-3248 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:102918 Serial 376  
Permanent link to this record
 

 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. doi  openurl
  Title Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM Type A1 Journal article
  Year (down) 1999 Publication Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland Abbreviated Journal Phys Status Solidi A  
  Volume 171 Issue 1 Pages 147-157  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.  
  Address  
  Corporate Author Thesis  
  Publisher Wiley Place of Publication Berlin Editor  
  Language Wos 000078539700020 Publication Date 2002-09-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 40 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:95798 Serial 1152  
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Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. openurl 
  Title Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM Type A1 Journal article
  Year (down) 1999 Publication Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A  
  Volume 171 Issue 1 Pages 147-157  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000078539700020 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 40 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:29687 Serial 1153  
Permanent link to this record
 

 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. openurl 
  Title On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope Type A1 Journal article
  Year (down) 1998 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal Philos Mag A  
  Volume 77 Issue 2 Pages 423-435  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000071976400010 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0141-8610; 1364-2804 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 23 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:29671 Serial 2440  
Permanent link to this record
 

 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. openurl 
  Title Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation Type H3 Book chapter
  Year (down) 1997 Publication Abbreviated Journal  
  Volume Issue Pages 63-92  
  Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Kluwer Academic Place of Publication s.l. Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:21412 Serial 1718  
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Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. openurl 
  Title New intermediate defect configuration in Si studied by in situ HREM irradiation Type A1 Journal article
  Year (down) 1997 Publication Conference series of the Institute of Physics Abbreviated Journal  
  Volume 157 Issue Pages 43-46  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000071954600006 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0305-2346 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:21428 Serial 2318  
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