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Author |
Dubourdieu, C.; Rauwel, E.; Roussel, H.; Ducroquet, F.; Hollaender, B.; Rossell, M.; Van Tendeloo, G.; Lhostis, S.; Rushworth, S. |
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Title |
Addition of yttrium into HfO2 films: microstructure and electrical properties |
Type |
A1 Journal article |
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Year  |
2009 |
Publication |
Journal of vacuum science and technology: A: vacuum surfaces and films |
Abbreviated Journal |
J Vac Sci Technol A |
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Volume |
27 |
Issue |
3 |
Pages |
503-514 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The cubic phase of HfO2 was stabilized by addition of yttrium in thin films grown on Si/SiO2 by metal-organic chemical vapor deposition. The cubic phase was obtained for contents of 6.5 at. % Y or higher at a temperature as low as 470 °C. The complete compositional range (from 1.5 to 99.5 at. % Y) was investigated. The crystalline structure of HfO2 was determined from x-ray diffraction, electron diffraction, and attenuated total-reflection infrared spectroscopy. For cubic films, the continuous increase in the lattice parameter indicates the formation of a solid-solution HfO2Y2O3. As shown by x-ray photoelectron spectroscopy, yttrium silicate is formed at the interface with silicon; the interfacial layer thickness increases with increasing yttrium content and increasing film thickness. The dependence of the intrinsic relative permittivity r as a function of Y content was determined. It exhibits a maximum of ~30 for ~8.8 at. % Y. The cubic phase is stable upon postdeposition high-temperature annealing at 900 °C under NH3. |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Wos |
000265739100016 |
Publication Date |
2009-05-02 |
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Edition |
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ISSN |
0734-2101; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.374 |
Times cited |
29 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.374; 2009 IF: 1.297 |
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Call Number |
UA @ lucian @ c:irua:77054 |
Serial |
58 |
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| Permanent link to this record |
