| Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
| Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
1992 |
Applied physics letters |
60 |
20 |
UA library record; WoS full record; WoS citing articles |
| Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
1992 |
Applied physics letters |
600 |
32 |
UA library record; WoS full record; WoS citing articles |
