Abstract: The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 25
DOI: 10.1103/PhysRevB.52.11273