NANOlab Center of Excellence literature database -- Query Results

“Material relaxation in chalcogenide OTS SELECTOR materials”. Clima S, Garbin D, Devulder W, Keukelier J, Opsomer K, Goux L, Kar GS, Pourtois G, Microelectronic engineering 215, 110996 (2019). http://doi.org/10.1016/J.MEE.2019.110996 Abstract: Nature of the mobility-gap states in amorphous Ge-rich Ge50Se50 was found to be related to homopolar Ge bonds in the chains/clusters of Ge atoms. Threshold switching material suffers Ge-Ge bond concentration drift during material ageing, which can explain the observed reliability of the aGe(50)Se(50) selector devices. Strong Ge-N bonds were introduced to alleviate the observed instability. Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) Impact Factor: 1.806 Times cited: 1 DOI: 10.1016/J.MEE.2019.110996 Additional Links: UA library record; WoS full record; WoS citing articles show.php?record=6308

Abstract: Nature of the mobility-gap states in amorphous Ge-rich Ge50Se50 was found to be related to homopolar Ge bonds in the chains/clusters of Ge atoms. Threshold switching material suffers Ge-Ge bond concentration drift during material ageing, which can explain the observed reliability of the aGe(50)Se(50) selector devices. Strong Ge-N bonds were introduced to alleviate the observed instability.

Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)

Impact Factor: 1.806

Times cited: 1

DOI: 10.1016/J.MEE.2019.110996

Additional Links: UA library record; WoS full record; WoS citing articles

show.php?record=6308