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| Author | Jalabert, D.; Pelloux-Gervais, D.; Béché, A.; Hartmann, J.M.; Gergaud, P.; Rouvière, J.L.; Canut, B. | ||||
| Title | Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering | Type | A1 Journal article | ||
Year  |
2012 | Publication | Physica Status Solidi A-Applications And Materials Science | Abbreviated Journal | Phys Status Solidi A |
| Volume | 209 | Issue | 2 | Pages | 265-267 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub-nanometer resolution and high strain sensitivity that the thin Si cap presents residual compressive strain caused by Ge diffusion coming from the fully strained SiGe layer underneath. The strain state of the SiGe buffer have been checked by X-ray diffraction (XRD) and nano-beam electron diffraction (NBED) measurements. | ||||
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| Language | Wos | 000303382700005 | Publication Date | 2011-11-11 | |
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| ISSN | 1862-6300; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 1.775 | Times cited | 3 | Open Access | |
| Notes | Approved | Most recent IF: 1.775; 2012 IF: 1.469 | |||
| Call Number | UA @ lucian @ c:irua:136430 | Serial | 4497 | ||
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