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| Author | Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. | ||||
| Title | Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope | Type | A1 Journal article | ||
Year  |
1995 | Publication | Materials science and technology | Abbreviated Journal | Mater Sci Tech-Lond |
| Volume | 11 | Issue | 11 | Pages | 1194-1202 |
| Keywords | A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) | ||||
| Abstract | Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials. | ||||
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| Publisher | Inst Materials | Place of Publication | London | Editor | |
| Language | Wos | A1995TQ95100016 | Publication Date | 2014-01-09 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0267-0836;1743-2847; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 0.995 | Times cited | 7 | Open Access | |
| Notes | Approved | no | |||
| Call Number | UA @ lucian @ c:irua:95911 | Serial | 2654 | ||
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