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| Author | Bougrioua, Z.; Farvacque, J.-L.; Moerman, I.; Demeester, P.; Harris, J.J.; Lee, K.; Van Tendeloo, G.; Lebedev, O.; Trush, E.J. | ||||
| Title | Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE | Type | A1 Journal article | ||
Year  |
1999 | Publication | Physica status solidi: B: basic research | Abbreviated Journal | Phys Status Solidi B |
| Volume | 216 | Issue | Pages | 571-576 | |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Berlin | Editor | ||
| Language | Wos | 000084193900110 | Publication Date | 2002-09-10 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0370-1972;1521-3951; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 1.674 | Times cited | 13 | Open Access | |
| Notes | Approved | Most recent IF: 1.674; 1999 IF: 0.978 | |||
| Call Number | UA @ lucian @ c:irua:29724 | Serial | 2095 | ||
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