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| Author | de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. | ||||
| Title | Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks | Type | A1 Journal article | ||
Year  |
2003 | Publication | Applied surface science | Abbreviated Journal | Appl Surf Sci |
| Volume | 203 | Issue | Pages | 523-526 | |
| Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
| Abstract | We analyzed ultra-thin ZrO2/SiO2/Si gate dielectrics under post-deposition anneals in dry O-2 at temperatures from 500 to 700 degreesC. TOF-SIMS profiling of ZrO2/SiO2/Si stacks is hampered by many sputter induced artifacts. The depletion of oxygen leads to a decrease in SIMS intensities. However, preferential sputtering is accompanied by transport of the depleted species towards the surface. Due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. Either normal or radiation-enhanced diffusion transports oxygen back to the surface. Simultaneously also segregation of zirconium towards and through the interface is observed, resulting in a large zirconium tail in the underlying silicon substrate. (C) 2002 Elsevier Science B.V. All rights reserved. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Elsevier science bv | Place of Publication | Amsterdam | Editor | |
| Language | Wos | 000180527300119 | Publication Date | 2002-12-30 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0169-4332; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 3.387 | Times cited | 15 | Open Access | |
| Notes | Approved | Most recent IF: 3.387; 2003 IF: 1.284 | |||
| Call Number | UA @ lucian @ c:irua:51975 | Serial | 1743 | ||
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