| Home | << 1 >> |
|
| Record | |||||
|---|---|---|---|---|---|
| Author | Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. | ||||
| Title | InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy | Type | A1 Journal article | ||
Year  |
1992 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 60 | Issue | Pages | 868-870 | |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | A1992HD74800027 | Publication Date | 2002-07-26 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 3.302 | Times cited | 20 | Open Access | |
| Notes | Approved | no | |||
| Call Number | UA @ lucian @ c:irua:4089 | Serial | 1590 | ||
| Permanent link to this record | |||||