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| Record | |||||
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| Author | Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. | ||||
| Title | The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study | Type | A1 Journal article | ||
Year  |
1997 | Publication | Journal of crystal growth | Abbreviated Journal | J Cryst Growth |
| Volume | 181 | Issue | Pages | 218-228 | |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Amsterdam | Editor | ||
| Language | Wos | A1997YD52700007 | Publication Date | 0000-00-00 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0022-0248 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 1.751 | Times cited | 9 | Open Access | |
| Notes | Approved | Most recent IF: 1.751; 1997 IF: 1.259 | |||
| Call Number | UA @ lucian @ c:irua:21415 | Serial | 1253 | ||
| Permanent link to this record | |||||