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Microstructure of YBa2Cu3O7-x films on buffered Si for microelectronic applications”. Vasiliev AL, Van Tendeloo G, Boikov Y, Olsson E, Ivanov S, Superconductor science and technology 10, 356 (1997)
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The microstructure and interfaces of intermediate layers in sapphire bicrystals”. Vasiliev AL, Stepantsov EA, Ivanov ZG, Verbist K, Van Tendeloo G, Olsson E, Applied surface science 119, 215 (1997)
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Structure of artificial grain boundaries in sapphire bicrystals with intermediate layers”. Vasiliev AL, Stepantsov EA, Ivanov ZG, Olsson E, Verbist K, Van Tendeloo G, Interface science 5, 223 (1997)
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Structural aspect of YBa2Cu3O7-x films on Sis with complex barrier layers”. Vasiliev AL, Van Tendeloo G, Amelinckx S, Boikov Y, Olsson E, Ivanov Z, Physica: C : superconductivity 244, 373 (1995). http://doi.org/10.1016/0921-4534(95)00080-1
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Y2O3 inclusions in YBa2Cu3O7-\delta thin films”. Verbist K, Vasiliev AL, Van Tendeloo G, Applied physics letters 66, 1424 (1995). http://doi.org/10.1063/1.113266
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EM, XPS and LEED study of deposition of Ag on hydrogenated Si substrate prepared by wet chemical treatments”. Zhang XB, Vasiliev AL, Van Tendeloo G, He Y, Yu L-M, Thiry PA, Surface science : a journal devoted to the physics and chemistry of interfaces 340, 317 (1995). http://doi.org/10.1016/0039-6028(95)00699-0
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Structural aspects of the combination of Si and YBa2Cu3O7-x”. Vasiliev AL, Van Tendeloo G, Boikov Y, Olsson E, Ivanov Z, Claeson T, Kiselev NA, Institute of physics conference series 146, 333 (1995)
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