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Dynamics of nanoclustering in Te+ implanted Si after application of high frequency electromagnetic field and thermal annealing”. Kalitzova M, Lebedev OI, Zollo G, Gesheva K, Vlakhov E, Marinov Y, Ivanova T;, Applied physics A : materials science &, processing 91, 515 (2008). http://doi.org/10.1007/s00339-008-4441-2
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Ion beam synthesis of Te and Bi nanoclusters in silicon: the effect of post-implantation high frequency electromagnetic field”. Kalitzova M, Peeva A, Ignatova V, Lebedev OI, Zollo G, Vitali G, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms 242, 209 (2006). http://doi.org/10.1016/j.nimb.2005.08.017
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Effect of high-frequency electromagnetic field on Te+-implanted (001) Si</tex>”. Kalitzova M, Vlakhov E, Marinov Y, Gesheva K, Ignatova VA, Lebedev O, Muntele C, Gijbels R, Vacuum: the international journal and abstracting service for vacuum science and technology 76, 325 (2004). http://doi.org/10.1016/j.vacuum.2004.07.055
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