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Author Canioni, R.; Roch-Marchal, C.; Sécheresse, F.; Horcajada, P.; Serre, C.; Hardi-Dan, M.; Férey, G.; Grenèche, J.-M.; Lefebvre, F.; Chang, J.-S.; Hwang, Y.-K.; Lebedev, O.; Turner, S.; Van Tendeloo, G. pdf  doi
openurl 
  Title Stable polyoxometalate insertion within the mesoporous metal organic framework MIL-100(Fe) Type A1 Journal article
  Year (down) 2011 Publication Journal of materials chemistry Abbreviated Journal J Mater Chem  
  Volume 21 Issue 4 Pages 1226-1233  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Successful encapsulation of polyoxometalate (POM) within the framework of a mesoporous iron trimesate MIL-100(Fe) sample has been achieved by direct hydrothermal synthesis in the absence of fluorine. XRPD, 31P MAS NMR, IR, EELS, TEM and 57Fe Mössbauer spectrometry corroborate the insertion of POM within the cavities of the MOF. The experimental Mo/Fe ratio is 0.95, in agreement with the maximum theoretical amount of POM loaded within the pores of MIL-100(Fe), based on steric hindrance considerations. The POM-MIL-100(Fe) sample exhibits a pore volume of 0.373 cm3 g−1 and a BET surface area close to 1000 m2 g−1, indicating that small gas molecules can easily diffuse inside the cavities despite the presence of heavy phosphomolybdates. These latter contribute to the decrease in the overall surface area, due to the increase in molar weight, by 65%. Moreover, the resulting Keggin containing MIL-100(Fe) solid is stable in aqueous solution with no POM leaching even after more than 2 months. In addition, no exchange of the Keggin anions by tetrabutylammonium perchlorate in organic media has been observed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge Editor  
  Language Wos 000286110400042 Publication Date 2010-11-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0959-9428;1364-5501; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 158 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:88642 Serial 3145  
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Author Lebedev, O.I.; Millange, F.; Serre, C.; Van Tendeloo, G.; Férey, G. pdf  doi
openurl 
  Title First direct imaging of giant pores of the metal-organic framework MIL-101 Type A1 Journal article
  Year (down) 2005 Publication Chemistry of materials Abbreviated Journal Chem Mater  
  Volume 17 Issue 26 Pages 6525-6527  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language Wos 000234187300007 Publication Date 2005-12-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0897-4756;1520-5002; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 9.466 Times cited 191 Open Access  
  Notes Approved Most recent IF: 9.466; 2005 IF: 4.818  
  Call Number UA @ lucian @ c:irua:56404 Serial 1197  
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Author Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. openurl 
  Title Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization Type A1 Journal article
  Year (down) 2000 Publication Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA Abbreviated Journal Mater Sci Forum  
  Volume 338-3 Issue Pages 309-312  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.  
  Address  
  Corporate Author Thesis  
  Publisher Trans tech publications ltd Place of Publication Zurich-uetikon Editor  
  Language Wos 000165996700075 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0255-5476 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 2 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:104262 Serial 1071  
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