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Author |
Pinera, I.; Cruz, C.M.; Abreu, Y.; Leyva, A.; van Espen, P.; Diaz, A.; Cabal, A.E.; Van Remortel, N. |
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Title |
Gamma induced atom displacements in LYSO and LuYAP crystals as used in medical imaging applications |
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A1 Journal article |
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Year  |
2015 |
Publication |
Interactions With Materials And Atoms |
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356 |
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Pages |
46-52 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Particle Physics Group; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
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Abstract |
The radiation damage, in terms of atom displacements, induced by gamma irradiation in LYSO and LuYAP crystals is presented. Sc-44, Na-22 and V-48 are used as gamma sources for this study. The energy of gammas from the electron positron annihilation processes (511 keV) is also included in the study. The atom displacements distributions inside each material are calculated following the Monte Carlo assisted Classical Method introduced by the authors. This procedure also allows to study the atom displacements in-depth distributions inside each crystal. The atom displacements damage in LYSO crystals is found to be higher than in LuYAP crystals, mainly provoked by the displacements of silicon and oxygen atoms. But the difference between atom displacements produced in LYSO and LuYAP decreases when more energetic sources are used. On the other hand, the correlation between the atom displacements and energy deposition in-depth distributions is excellent. The atom displacements to energy deposition ratio is found to increases with more energetic photon sources. LYSO crystals are then more liable to the atom displacements damage than LuYAP crystals. (C) 2015 Elsevier B.V. All rights reserved. |
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Wos |
000356990400008 |
Publication Date |
2015-05-14 |
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0168-583x |
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UA library record; WoS full record; WoS citing articles |
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no |
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Call Number |
UA @ admin @ c:irua:127012 |
Serial |
7987 |
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Author |
Piñera, I.; Abreu, Y.; van Espen, P.; Diaz, A.; Leyva, A.; Cruz, C.M. |
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Title |
Radiation damage evaluation on LYSO and LuYAP materials through Dpa calculation assisted by Monte Carlo method |
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P1 Proceeding |
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Year |
2011 |
Publication |
IEEE conference record
T2 – IEEE Nuclear Science Symposium/Medical Imaging Conference (NSS/MIC)/18th, International Workshop on Room-Temperature Semiconductor X-Ray and, Gamma-Ray Detectors, OCT 23-29, 2011, Valencia, SPAIN |
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Pages |
1609-1611 |
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Keywords |
P1 Proceeding; Engineering sciences. Technology; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
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Abstract |
The aim of the present work is to study the radiation damage induced in LYSO and LuYAP crystals by the gamma radiation and the secondary electrons/positrons generated. The displacements per atom (dpa) distributions inside each material were calculated following the Monte Carlo assisted Classical Method (MCCM) introduced by the authors. As gamma sources were used Sc-44, Na-22 and V-48. Also the energy of gammas from the annihilation processes (511 keV) was included in the study. This procedure allowed studying the in-depth dpa distributions inside each crystal for all four sources. It was also possible to obtain the separate contribution from each atom to the total dpa. The LYSO crystals were found to receive more damage, mainly provoked by the displacements of silicon and oxygen atoms. |
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000304755601169 |
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978-1-4673-0120-6 |
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UA library record; WoS full record; WoS citing articles |
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Call Number |
UA @ admin @ c:irua:113072 |
Serial |
8447 |
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