“Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device”. Chen YY, Pourtois G, Adelmann C, Goux L, Govoreanu B, Degreave R, Jurczak M, Kittl JA, Groeseneken G, Wouters DJ, Applied physics letters 100, 113513 (2012). http://doi.org/10.1063/1.3695078
Abstract: In this letter, CMOS-compatible Ni/HfO2/TiN resistive random access memory stacks demonstrated attractive unipolar switching properties, showing >10(3) endurance and long retention at 150 degrees C. The Ni bottom electrode (BE) improved the switching yield over the NiSiPt BE. To better understand the unipolar forming mechanism, ab initio simulation and time of flight-secondary ion mass spectroscopy were utilized. Compared to the NiSiPt BE, Ni BE gives larger Ni diffusion in the HfO2 and lower formation enthalpy of Ni2+ species during electrical forming. Both the electrical and physical results supported a Ni-injection mechanism for the filament formation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695078]
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 29
DOI: 10.1063/1.3695078
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