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Author Ranieri, P.; Shrivastav, R.; Wang, M.; Lin, A.; Fridman, G.; Fridman, A.A.; Han, L.-H.; Miller, V.
Title Nanosecond-pulsed dielectric barrier dischargeinduced antitumor effects propagate through depth of tissue via intracellular signaling Type A1 Journal article
Year (down) 2017 Publication Plasma medicine Abbreviated Journal
Volume 7 Issue 3 Pages 283-297
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Studies using xenograft mouse models have shown that plasma applied to the skin overlying tumors results in tumor shrinkage. Plasma is considered a nonpenetrating treatment; however, these studies demonstrate plasma effects that occur beyond the postulated depth of physical penetration of plasma components. The present study examines the propagation of plasma effects through a tissue model using three-dimensional, cell-laden extracellular matrices (ECMs). These ECMs are used as barriers against direct plasma penetration. By placing them onto a monolayer of target cancer cells to create an in-vitro analog to in-vivo studies, we distinguished between cellular effects from direct plasma exposure and cellular effects due to cell-to-cell signaling stimulated by plasma. We show that nanosecond-pulsed dielectric barrier discharge plasma treatment applied atop an acellular barrier impedes the externalization of calreticulin (CRT) in the target cells. In contrast, when a barrier is populated with cells, CRT externalization is restored. Thus, we demonstrate that plasma components stimulate signaling among cells embedded in the barrier to transfer plasma effects to the target cells.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 2017-09-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:155658 Serial 8293
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Author Zhou, C.; Ji, G.; Chen, Z.; Wang, M.; Addad, A.; Schryvers, D.; Wang, H.
Title Fabrication, interface characterization and modeling of oriented graphite flakes/Si/Al composites for thermal management applications Type A1 Journal article
Year (down) 2014 Publication Materials and design Abbreviated Journal Mater Design
Volume 63 Issue Pages 719-728
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Highly thermally conductive graphite flakes (Gf)/Si/Al composites have been fabricated using Gf, Si powder and an AlSi7Mg0.3 alloy by an optimized pressure infiltration process for thermal management applications. In the composites, the layers of Gf were spaced apart by Si particles and oriented perpendicular to the pressing direction, which offered the opportunity to tailor the thermal conductivity (TC) and coefficient of thermal expansion (CTE) of the composites. Microstructural characterization revealed that the formation of a clean and tightly-adhered interface at the nanoscale between the side surface of the Gf and Al matrix, devoid of a detrimental Al4C3 phase and a reacted amorphous AlSiOC layer, contributed to excellent thermal performance along the alignment direction. With increasing volume fraction of Gf from 13.7 to 71.1 vol.%, the longitudinal (i.e. parallel to the graphite layers) TC of the composites increased from 179 to 526 W/m K, while the longitudinal CTE decreased from 12.1 to 7.3 ppm/K (matching the values of electronic components). Furthermore, the modified layers-in-parallel model better fitted the longitudinal TC data than the layers-in-parallel model and confirmed that the clean and tightly-adhered interface is favorable for the enhanced longitudinal TC.
Address
Corporate Author Thesis
Publisher Place of Publication Reigate Editor
Language Wos 000340949300086 Publication Date 2014-07-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0261-3069; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 61 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:118124 Serial 1166
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Author Wang, M.; Chang, K.; Wang, L.G.; Dai, N.; Peeters, F.M.
Title Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires Type A1 Journal article
Year (down) 2009 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 20 Issue 36 Pages 365202,1-365202,8
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spinorbit interaction (RSOI) and the Dresselhaus spinorbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000269077000003 Publication Date 2009-08-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.44 Times cited 14 Open Access
Notes Approved Most recent IF: 3.44; 2009 IF: 3.137
Call Number UA @ lucian @ c:irua:78933 Serial 588
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