| Records |
| Author |
van Daele, B.; Van Tendeloo, G.; Jacobs, K.; Moerman, I.; Leys, M. |
| Title |
Formation of metallic In in InGaN/GaN multiquantum wells |
Type |
A1 Journal article |
Year  |
2004 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
| Volume |
85 |
Issue |
19 |
Pages |
4379-4381 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| Language |
|
Wos |
000224962800038 |
Publication Date |
2004-11-08 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
3.411 |
Times cited |
32 |
Open Access |
|
| Notes |
IAP V-1; IWT-Project No.980319 |
Approved |
Most recent IF: 3.411; 2004 IF: 4.308 |
| Call Number |
UA @ lucian @ c:irua:54804 |
Serial |
1261 |
| Permanent link to this record |
| |
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| |
| Author |
Jacobs, K.; van Daele, B.; Leys, M.; Moerman, I.; Van Tendeloo, G. |
| Title |
Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures |
Type |
A1 Journal article |
| Year |
2003 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
| Volume |
248 |
Issue |
|
Pages |
498-502 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
| Language |
|
Wos |
000180446900091 |
Publication Date |
2002-12-28 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0022-0248; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
1.751 |
Times cited |
14 |
Open Access |
|
| Notes |
was dubbel; dubbel eruit gehaald |
Approved |
Most recent IF: 1.751; 2003 IF: 1.414 |
| Call Number |
UA @ lucian @ c:irua:54785 |
Serial |
810 |
| Permanent link to this record |
| |
|
| |
| Author |
Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
| Title |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
Type |
A1 Journal article |
| Year |
2000 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
| Volume |
77 |
Issue |
4 |
Pages |
507-509 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X]. |
| Address |
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| Corporate Author |
|
Thesis |
|
| Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| Language |
|
Wos |
000088225400016 |
Publication Date |
2002-07-26 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
3.411 |
Times cited |
44 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 3.411; 2000 IF: 3.906 |
| Call Number |
UA @ lucian @ c:irua:103448 |
Serial |
712 |
| Permanent link to this record |
