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Author Wu, S.; Luo, X.; Turner, S.; Peng, H.; Lin, W.; Ding, J.; David, A.; Wang, B.; Van Tendeloo, G.; Wang, J.; Wu, T.;
Title Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures Type A1 Journal article
Year (down) 2013 Publication Physical review X Abbreviated Journal Phys Rev X
Volume 3 Issue 4 Pages 041027-14
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the unconventional bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.
Address
Corporate Author Thesis
Publisher Place of Publication College Park, Md Editor
Language Wos 000328862400001 Publication Date 2013-12-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2160-3308; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 12.789 Times cited 77 Open Access
Notes FWO;FP7;IFOX; Countatoms; Hercules Approved Most recent IF: 12.789; 2013 IF: 8.463
Call Number UA @ lucian @ c:irua:112524 Serial 2365
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Author Boullay, P.; David, A.; Sheets, W.C.; Lüders, U.; Prellier, W.; Tan, H.; Verbeeck, J.; Van Tendeloo, G.; Gatel, C.; Vincze, G.; Radi, Z.
Title Microstructure and interface studies of LaVO3/SrVO3 superlattices Type A1 Journal article
Year (down) 2011 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 83 Issue 12 Pages 125403-125403,6
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The structure and interface characteristics of (LaVO3)6m(SrVO3)m superlattices deposited on a (100)-SrTiO3 substrate were studied using transmission electron microscopy (TEM). Cross-section TEM studies revealed that both LaVO3 (LVO) and SrVO3 (SVO) layers are good single-crystal quality and epitaxially grown with respect to the substrate. It is evidenced that LVO layers are made of two orientational variants of a distorted perovskite compatible with bulk LaVO3, while SVO layers suffers from a tetragonal distortion due to the substrate-induced stain. Electron energy loss spectroscopy investigations indicate changes in the fine structure of the V L23 edge, related to a valence change between the LaVO3 and the SrVO3 layers.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000288160300006 Publication Date 2011-03-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 26 Open Access
Notes Fwo; Esteem 026019 Approved Most recent IF: 3.836; 2011 IF: 3.691
Call Number UA @ lucian @ c:irua:88648UA @ admin @ c:irua:88648 Serial 2054
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