| Records |
| Author |
Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
| Title |
Phonon-assisted Zener tunneling in a cylindrical nanowire transistor |
Type |
A1 Journal article |
Year  |
2013 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| Volume |
113 |
Issue |
18 |
Pages |
184507-184508 |
| Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| Abstract |
The tunneling current has been computed for a cylindrical nanowire tunneling field-effect transistor (TFET) with an all-round gate that covers the source region. Being the underlying mechanism, band-to-band tunneling, mediated by electron-phonon interaction, is pronouncedly affected by carrier confinement in the radial direction and, therefore, involves the self-consistent solution of the Schrodinger and Poisson equations. The latter has been accomplished by exploiting a non-linear variational principle within the framework of the modified local density approximation taking into account the nonparabolicity of both the valence band and conduction band in relatively thick wires. Moreover, while the effective-mass approximation might still provide a reasonable description of the conduction band in relatively thick wires, we have found that the nonparabolicity of the valence band needs to be included. As a major conclusion, it is observed that confinement effects in nanowire tunneling field-effect transistors have a stronger impact on the onset voltage of the tunneling current in comparison with planar TFETs. On the other hand, the value of the onset voltage is found to be overestimated when the valence band nonparabolicity is ignored. (C) 2013 AIP Publishing LLC. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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| Language |
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Wos |
000319294100093 |
Publication Date |
2013-05-10 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
2.068 |
Times cited |
4 |
Open Access |
|
| Notes |
; This work was supported by the Flemish Science Foundation (FWO-VI), and the Interuniversity Attraction Poles, Belgium State, Belgium Science Policy, and IMEC. ; |
Approved |
Most recent IF: 2.068; 2013 IF: 2.185 |
| Call Number |
UA @ lucian @ c:irua:109651 |
Serial |
2599 |
| Permanent link to this record |
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| |
| Author |
Carrillo-Nuñez, H.; Magnus, W.; Peeters, F.M. |
| Title |
A simplified quantum mechanical model for nanowire transistors based on non-linear variational calculus |
Type |
A1 Journal article |
| Year |
2010 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| Volume |
108 |
Issue |
6 |
Pages |
063708,1-063708,8 |
| Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| Abstract |
A simplified quantum mechanical model is developed to investigate quantum transport features such as the electron concentration and the current flowing through a silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET). In particular, the electron concentration is extracted from a self-consistent solution of the Schrödinger and Poisson equations as well as the ballistic Boltzmann equation which have been solved by exploiting a nonlinear variational principle within the framework of the generalized local density approximation. A suitable action functional has been minimized and details of the implementation and its numerical minimization are given. The current density and its related current-voltage characteristics are calculated from the one-dimensional ballistic steady-state Boltzmann transport equation which is solved analytically by using the method of characteristic curves. The straightforward implementation, the computational speed and the good qualitative behavior of the transport characteristics observed in our approach make it a promising simulation method for modeling quantum transport in nanowire MOSFETs. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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| Language |
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Wos |
000282646400067 |
Publication Date |
2010-09-22 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
|
Edition |
|
| ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
2.068 |
Times cited |
7 |
Open Access |
|
| Notes |
; This work was supported by Flemish Science Foundation (FWO-VI) and the Interuniversity Attraction Poles, Belgium State, Belgium Science Policy, and IMEC. ; |
Approved |
Most recent IF: 2.068; 2010 IF: 2.079 |
| Call Number |
UA @ lucian @ c:irua:84943 |
Serial |
3006 |
| Permanent link to this record |
| |
|
| |
| Author |
Carrillo-Nuñez, H.; Magnus, W.; Peeters, F.M. |
| Title |
A non-linear variational principle for the self-consistent solution of Poisson's equation and a transport equation in the local density approximation |
Type |
P1 Proceeding |
| Year |
2010 |
Publication |
|
Abbreviated Journal |
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| Volume |
|
Issue |
|
Pages |
171-174 |
| Keywords |
P1 Proceeding; Condensed Matter Theory (CMT) |
| Abstract |
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| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
Ieee |
Place of Publication |
New York, N.Y. |
Editor |
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| Language |
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Wos |
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Publication Date |
0000-00-00 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
978-1-4244-7699-2 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
| Impact Factor |
|
Times cited |
|
Open Access |
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| Notes |
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Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:85824 |
Serial |
2347 |
| Permanent link to this record |
