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Composition-dependent charge transfer and phase separation in the V1-xRexO2 solid solution”. Mikhailova D, Kuratieva NN, Utsumi Y, Tsirlin AA, Abakumov AM, Schmidt M, Oswald S, Fuess H, Ehrenberg H, Journal of the Chemical Society : Dalton transactions 46, 1606 (2017). http://doi.org/10.1039/C6DT04389E
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High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs”. Buschmann V, Rodewald M, Fuess H, Van Tendeloo G, Schäffer C, Journal of applied physics 85, 2119 (1999). http://doi.org/10.1063/1.369512
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Microstructural characterization of diamond films deposited on c-BN crystals”. Nistor L, Buschmann V, Ralchenko V, Dinca G, Vlasov I, van Landuyt J, Fuess H, Diamond and related materials T2 –, 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC 9, 269 (2000). http://doi.org/10.1016/S0925-9635(99)00246-0
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Hetero-epitaxial growth of CoSi2 thin films on Si(100) : template effects and epitaxial orientations”. Buschmann V, Rodewald M, Fuess H, Van Tendeloo G, Schaffer C, Journal of crystal growth 191, 430 (1998). http://doi.org/10.1016/S0022-0248(98)00167-5
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