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Author Martin, J.M.L.; François, J.P.; Gijbels, R.
Title The impact of quantum chemical methods on the interpretation of molecular spectra of carbon clusters (review article) Type (up) A1 Journal article
Year 1993 Publication Journal of molecular structure Abbreviated Journal J Mol Struct
Volume 294 Issue Pages 21-24
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1993KU48000006 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-2860; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.602 Times cited 21 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:6148 Serial 1560
Permanent link to this record
 
 
Author Li, Z.; Covaci, L.; Berciu, M.; Baillie, D.; Marsiglio, F.
Title Impact of spin-orbit coupling on the Holstein polaron Type (up) A1 Journal article
Year 2011 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 83 Issue 19 Pages 195104-195104,9
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We utilize an exact variational numerical procedure to calculate the ground state properties of a polaron in the presence of a Rashba-like spin-orbit interaction. Our results corroborate previous work performed with the momentum average approximation and with weak-coupling perturbation theory. We find that spin-orbit coupling increases the effective mass in the regime with weak electron-phonon coupling, and decreases the effective mass in the regimes of intermediate and strong electron-phonon coupling. Analytical strong-coupling perturbation theory results confirm our numerical results in the small-polaron regime. A large amount of spin-orbit coupling can lead to a significant lowering of the polaron effective mass.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000290162500001 Publication Date 2011-05-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 9 Open Access
Notes ; This work was supported in part by the Natural Sciences and Engineering Research Council of Canada (NSERC), by ICORE (Alberta), by Alberta Ingenuity, by the Flemish Science Foundation (FWO-Vl), and by the Canadian Institute for Advanced Research (CIfAR). ; Approved Most recent IF: 3.836; 2011 IF: 3.691
Call Number UA @ lucian @ c:irua:89718 Serial 1561
Permanent link to this record
 
 
Author Shanenko, A.A.
Title Imperfect fermi gas : kinetic and interaction energies Type (up) A1 Journal article
Year 2004 Publication Physical review : A : atomic, molecular and optical physics Abbreviated Journal Phys Rev A
Volume 70 Issue 6 Pages 063618-13
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract A uniform ground-state three-dimensional Fermi gas with short-range repulsive pairwise interaction is under consideration. Its kinetic and interaction energies are calculated up to the second order of the expansion in the gas parameter. Similar to recent results for an interacting Bose gas, the quantities in question are found to depend on the pairwise interaction through two characteristic lengths: the former, a, is the s-wave scattering length, and the latter, b, is related to a by b=a-m(partial derivativea/partial derivativem), where m stands for the fermion mass. To control the results, we proceed in two independent ways. The first involves the Hellmann-Feynman theorem applied to derive the kinetic and interaction energies from the total-energy expansion in the gas parameter first found by Huang and Yang. The second way operates with in-medium pair wave functions and allows one to calculate the quantities of interest “from scratch.” The results of the present investigation, taken together with those of the recent consideration of a dilute Bose gas, make it possible to conclude that the pairwise interaction in a quantum gas has an essential and nontrivial effect on the kinetic energy, which is not the case for a classical many-particle system.
Address
Corporate Author Thesis
Publisher American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000226418900116 Publication Date 2004-12-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1050-2947;1094-1622; ISBN Additional Links UA library record; WoS full record
Impact Factor 2.925 Times cited Open Access
Notes Approved Most recent IF: 2.925; 2004 IF: 2.902
Call Number UA @ lucian @ c:irua:103196 Serial 1562
Permanent link to this record
 
 
Author Dubrovinsky, L.; Dubrovinskaia, N.; Prakapenka, V.B.; Abakumov, A.M.
Title Implementation of micro-ball nanodiamond anvils for high-pressure studies above 6 Mbar Type (up) A1 Journal article
Year 2012 Publication Nature communications Abbreviated Journal Nat Commun
Volume 3 Issue Pages 1163-1167
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Since invention of the diamond anvil cell technique in the late 1950s for studying materials at extreme conditions, the maximum static pressure generated so far at room temperature was reported to be about 400 GPa. Here we show that use of micro-semi-balls made of nanodiamond as second-stage anvils in conventional diamond anvil cells drastically extends the achievable pressure range in static compression experiments to above 600 GPa. Micro-anvils (10-50 mu m in diameter) of superhard nano-diamond (with a grain size below similar to 50 nm) were synthesized in a large volume press using a newly developed technique. In our pilot experiments on rhenium and gold we have studied the equation of state of rhenium at pressures up to 640 GPa and demonstrated the feasibility and crucial necessity of the in situ ultra high-pressure measurements for accurate determination of material properties at extreme conditions.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000313514100073 Publication Date 2012-10-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2041-1723; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 12.124 Times cited 150 Open Access
Notes Approved Most recent IF: 12.124; 2012 IF: 10.015
Call Number UA @ lucian @ c:irua:110134 Serial 1563
Permanent link to this record
 
 
Author Bultinck, E.; Kolev, I.; Bogaerts, A.; Depla, D.
Title The importance of an external circuit in a particle-in-cell/Monte Carlo collisions model for a direct current planar magnetron Type (up) A1 Journal article
Year 2008 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 103 Issue 1 Pages 013309,1-9
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000252890700024 Publication Date 2008-01-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 29 Open Access
Notes Approved Most recent IF: 2.068; 2008 IF: 2.201
Call Number UA @ lucian @ c:irua:66176 Serial 1564
Permanent link to this record
 
 
Author Coghe, F.; Tirry, W.; Rabet, L.; Schryvers, D.; Van Houtte, P.
Title Importance of twinning in static and dynamic compression of a Ti-6Al-4V titanium alloy with an equiaxed microstructure Type (up) A1 Journal article
Year 2012 Publication Materials science and engineering: part A: structural materials: properties, microstructure and processing Abbreviated Journal Mat Sci Eng A-Struct
Volume 537 Issue Pages 1-10
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Whereas deformation twinning is known to be an important deformation mechanism for hexagonal materials like magnesium and pure titanium, so far almost no literature exists on the twinning behaviour of the Ti-6Al-4V alloy. In this work it was shown that the activation of twinning as a deformation mechanism could have a pronounced effect on the mechanical behaviour of the Ti-6Al-4V alloy. This effect is even more pronounced under dynamic loading conditions. Transmission electron microscopy showed that only the {1 0 1 2}{1 0 1 1} tensile twin system was activated under certain loading conditions. Light-optical microscopy and electron backscatter diffraction data were afterwards used to experimentally determine the twin fractions. The importance of twinning for the texture evolution was also studied. It was shown that even small twin fractions can lead to distinct texture features, especially due to the discrete reorientation of the c-axes. The experimental results were compared to simulated results that were obtained with a viscoplastic self-consistent crystal plasticity code, after experimental validation that twinning can be reliably modelled as a unidirectional slip system. Although good agreement was obtained for the experimental and simulated stress-strain curves, the simulated results concerning twinning correlated well only on a qualitative basis as the simulated twin fractions were systematically higher than the experimental fractions. This seems to strengthen the hypothesis made by other research groups that complete grains might reorient by twinning. (C) 2011 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos 000301473300001 Publication Date 2011-12-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-5093; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.094 Times cited 35 Open Access
Notes Approved Most recent IF: 3.094; 2012 IF: 2.108
Call Number UA @ lucian @ c:irua:97818 Serial 1565
Permanent link to this record
 
 
Author Bogaerts, A.; Gijbels, R.; Goedheer, W.
Title Improved hybrid Monte Carlo-fluid model for the electrical characteristics in an analytical radiofrequency glow discharge in argon Type (up) A1 Journal article
Year 2001 Publication Journal of analytical atomic spectrometry Abbreviated Journal J Anal Atom Spectrom
Volume 16 Issue Pages 750-755
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000170034200006 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0267-9477;1364-5544; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.379 Times cited 11 Open Access
Notes Approved Most recent IF: 3.379; 2001 IF: 3.305
Call Number UA @ lucian @ c:irua:37249 Serial 1566
Permanent link to this record
 
 
Author Lobato, I.; van Dyck, D.
Title Improved multislice calculations for including higher-order Laue zones effects Type (up) A1 Journal article
Year 2012 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 119 Issue Pages 63-71
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract A new method for including higher-order Laue zones (HOLZs) effects in an efficient way in electron scattering simulations has been developed and tested by detail calculations. The calculated results by the conventional multislice (CMS) method and the improved conventional multislice (ICMS) method using a large dynamical aperture to avoid numerical errors are compared with accurate results. We have found that the zero-order Laue zones (ZOLZs) reflection cannot be properly described only using the projected potential in the whole unit cell; in general, we need to subslice the electrostatic potential inside the unit cell. It is shown that the ICMS method has higher accuracy than the CMS method for the calculation of the ZOLZ, HOLZ and Pseudo-HOLZ reflections. Hence, ICMS method allows to use a larger slice thickness than the CMS method and reduces the calculation time. (C) 2012 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000308079200011 Publication Date 2012-01-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 6 Open Access
Notes Approved Most recent IF: 2.843; 2012 IF: 2.470
Call Number UA @ lucian @ c:irua:101902 Serial 1567
Permanent link to this record
 
 
Author Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G.
Title Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic Type (up) A1 Journal article
Year 2014 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 105 Issue 24 Pages 243506
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In0.53Ga0.47As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design. (C) 2014 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000346643600076 Publication Date 2014-12-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951;1077-3118; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 10 Open Access
Notes ; D. Verreck acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was supported by imec's Industrial Affiliation Program. ; Approved Most recent IF: 3.411; 2014 IF: 3.302
Call Number UA @ lucian @ c:irua:122798 Serial 1568
Permanent link to this record
 
 
Author Savchenko, D.V.; Serdan, A.A.; Morozov, V.A.; Van Tendeloo, G.; Ionov, S.G.
Title Improvement of the oxidation stability and the mechanical properties of flexible graphite foil by boron oxide impregnation Type (up) A1 Journal article
Year 2012 Publication New carbon materials Abbreviated Journal
Volume 27 Issue 1 Pages 12-18
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Flexible graphite foil produced by rolling expanded graphite impregnated with boron oxide was analyzed by laser mass spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and thermogravimetry. It was shown that the modification of the graphite foil by boron oxide increases the onset temperature of oxidation by ∼ 150 °C. Impregnation of less than 2 mass% boron oxide also increased the tensile strength of the materials. The observed improvement was attributed to the blocking of active sites by boron oxide, which is probably chemically bonded to the edges of graphene sheets in expanded graphite particles.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000304742100002 Publication Date 2012-03-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1872-5805; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 5 Open Access
Notes Iap Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:96958 Serial 1569
Permanent link to this record
 
 
Author Hilber, W.; Helm, M.; Peeters, F.M.; Alavi, K.; Pathak, R.N.
Title Impurity band and magnetic-field-induced metal-insulator transition in a doped GaAs/AlxGa1-xAs superlattice Type (up) A1 Journal article
Year 1996 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 53 Issue 11 Pages 6919-6922
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract A combination of infrared spectroscopy and magnetotransport is used to investigate the impurity band and the magnetic-field-induced metal-insulator transition in n-type GaAs/AlxGa1-xAs superlattices. The dropping of the Fermi level from the conduction band into the impurity band upon increasing magnetic field is observed in a sample doped to n=4n(c), where n(c) is the critical density according to the Mott criterion. The metal-insulator transition takes place while the Fermi level is in the impurity band, with no qualitative change from the metallic to the insulating side. Due to the anisotropy of the superlattice band structure, the metal-insulator transition is shifted to higher magnetic field, when the magnetic field is tilted away from the growth axis towards the layer planes.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos A1996UC74000018 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.736 Times cited 14 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:99676 Serial 1571
Permanent link to this record
 
 
Author Zha, G.-Q.; Chen, Y.; Peeters, F.M.; Zhou, S.-P.
Title Impurity-induced modulations of orders in d-wave superconductors Type (up) A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 80 Issue 6 Pages 064518,1-064518,5
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract By using a model Hamiltonian with competing antiferromagnetic (AFM) and d-wave superconductivity orders, the impurity-induced structures of orders in d-wave superconductors is investigated. We find that the transition between one-dimensional stripe and two-dimensional checkerboardlike modulation around a single nonmagnetic impurity can take place as the strength of the AFM interaction U or the impurity scattering strength V0 is varied. It is also found that the impurity-induced stripe can first transit to checkerboardlike modulation and then disappears with increasing the next-nearest-neighbor hopping strength |t|. Phase diagrams of V0 versus U and |t| for various modulations of the spin order are presented. In addition, the quantum interference effect on the modulations of orders due to two strong nonmagnetic impurities is briefly examined, and the checkerboardlike and quasistripe patterns can occur depending on the sites where two impurities are placed.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000269638800074 Publication Date 2009-09-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 3 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:78293 Serial 1572
Permanent link to this record
 
 
Author Berdiyorov, G.R.; Savel'ev, S.E.; Kusmartsev, F.V.; Peeters, F.M.
Title In-phase motion of Josephson vortices in stacked SNS Josephson junctions : effect of ordered pinning Type (up) A1 Journal article
Year 2013 Publication Superconductor science and technology Abbreviated Journal Supercond Sci Tech
Volume 26 Issue 12 Pages 125010-125016
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The dynamics of Josephson vortices (fluxons) in artificial stacks of superconducting-normal-superconducting Josephson junctions is investigated using the anisotropic time-dependent Ginzburg-Landau theory in the presence of a square/rectangular array of pinning centers (holes). For small values of the applied drive, fluxons in different junctions move out of phase, forming a periodic triangular lattice. A rectangular lattice of moving fluxons is observed at larger currents, which is in agreement with previous theoretical predictions (Koshelev and Aranson 2000 Phys. Rev. Lett. 85 3938). This 'superradiant' flux-flow state is found to be stable in a wide region of applied current. The stability range of this ordered state is considerably larger than the one obtained for the pinning-free sample. Clear commensurability features are observed in the current-voltage characteristics of the system with pronounced peaks in the critical current at (fractional) matching fields. The effect of density and strength of the pinning centers on the stability of the rectangular fluxon lattice is discussed. Predicted synchronized motion of fluxons in the presence of ordered pinning can be detected experimentally using the rf response of the system, where enhancement of the Shapiro-like steps is expected due to the synchronization.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000327447200013 Publication Date 2013-10-29
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048;1361-6668; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.878 Times cited 5 Open Access
Notes ; This work was supported by EU Marie Curie (Project No: 253057) and by the Flemish Science Foundation (FWO-Vl). ; Approved Most recent IF: 2.878; 2013 IF: 2.796
Call Number UA @ lucian @ c:irua:112834 Serial 1573
Permanent link to this record
 
 
Author Szafran, B.; Peeters, F.M.; Bednarek, S.; Adamowski, J.
Title In-plane magnetic-field-induced Wigner crystallization in a two-electron quantum dot Type (up) A1 Journal article
Year 2004 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 70 Issue Pages 235335,1-9
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000226112100114 Publication Date 2004-12-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 7 Open Access
Notes Approved Most recent IF: 3.836; 2004 IF: 3.075
Call Number UA @ lucian @ c:irua:69400 Serial 1574
Permanent link to this record
 
 
Author Aerts, R.; Snoeckx, R.; Bogaerts, A.
Title In-situ chemical trapping of oxygen in the splitting of carbon dioxide by plasma Type (up) A1 Journal article
Year 2014 Publication Plasma processes and polymers Abbreviated Journal Plasma Process Polym
Volume 11 Issue 10 Pages 985-992
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Weinheim Editor
Language Wos 000344180900008 Publication Date 2014-08-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1612-8850; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.846 Times cited 29 Open Access
Notes Approved Most recent IF: 2.846; 2014 IF: 2.453
Call Number UA @ lucian @ c:irua:118302 Serial 1575
Permanent link to this record
 
 
Author Muto, S.; Schryvers, D.
Title In situ high resolution electron microscopy observation of electron-irradiation-induced martensitic transformation in a Ni63Al37 alloy Type (up) A1 Journal article
Year 1993 Publication Journal of alloys and compounds Abbreviated Journal J Alloy Compd
Volume 199 Issue 1-2 Pages 1-6
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract An electron-irradiation-induced transformation from cubic beta2 austenite to monoclinic 7M martensite was observed in situ under high resolution electron microscopy conditions in a thin foil of Ni63Al37 beta2 phase (B2, CsCl structure), with the start temperature of the martensitic transformation below but very close to room temperature. The structure of the martensite is consistent with thermoelastic or stress-induced martensite at this composition, including the existence of multiple stacking faults. The transformation is described by a gradual increase in the shear and shuffle amplitudes already existing in the precursor domains. Possible origins of the transformation are discussed.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1993LV15200004 Publication Date 2003-06-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-8388; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.999 Times cited 8 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:102953 Serial 1576
Permanent link to this record
 
 
Author Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C.
Title In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures Type (up) A1 Journal article
Year 2000 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 61 Issue 15 Pages 10336-10345
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000086606200082 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 27 Open Access
Notes Conference Name: Microsc. Semicond. Mater. Conf. Approved Most recent IF: 3.836; 2000 IF: NA
Call Number UA @ lucian @ c:irua:103456 Serial 1577
Permanent link to this record
 
 
Author Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.
Title In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure Type (up) A1 Journal article
Year 1997 Publication Conference series of the Institute of Physics Abbreviated Journal
Volume 157 Issue Pages 55-58
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000071954600008 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0305-2346 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:21432 Serial 1578
Permanent link to this record
 
 
Author Muto, S.; Schryvers, D.
Title In-situ HREM observation of electron-irradation-induced martensitic transformation in a Ni63Al37 alloy Type (up) A1 Journal article
Year 1993 Publication Journal of alloys and compounds Abbreviated Journal J Alloy Compd
Volume 199 Issue Pages 1-6
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1993LV15200004 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-8388 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.999 Times cited 8 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:6777 Serial 1579
Permanent link to this record
 
 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R.
Title In situ HREM study of electron irradiation effects in AgCl microcrystals Type (up) A1 Journal article
Year 1992 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 40 Issue Pages 151-162
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1992HN13400005 Publication Date 2002-10-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.436 Times cited 10 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:4094 Serial 1581
Permanent link to this record
 
 
Author Vanhellemont, J.; Claeys, C.; van Landuyt, J.
Title In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces Type (up) A1 Journal article
Year 1995 Publication Physica status solidi: A: applied research Abbreviated Journal
Volume 150 Issue Pages 497-506
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos A1995RQ21500043 Publication Date 2007-01-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 6 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13293 Serial 1582
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Author Muguerra, H.; Pescheux, A.-C.; Meledin, A.; Van Tendeloo, G.; Soubeyroux, J.-L.
Title A La2−xGdxZr2O7layer deposited by chemical solution: a promising seed layer for the fabrication of high Jcand low cost coated conductors Type (up) A1 Journal article
Year 2015 Publication Journal of materials chemistry C : materials for optical and electronic devices Abbreviated Journal J Mater Chem C
Volume 3 Issue 3 Pages 11766-11772
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We deposited La2-xGdxZr2O7 seed layers by a chemical solution method on a Ni-5%W substrate to study the influence of these layers on the growth process of a 60 nm-thick La2Zr2O7 layer. We measured the performances of these new buffer layers integrated in a coated conductor with a 300 nm-thick Y0.5Gd0.5Ba2Cu3O7-x layer. For the seed layers{,} we considered two different gadolinium contents (x = 0.2 and x = 0.8) and three different thicknesses for these compositions (20 nm{,} 40 nm{,} and 60 nm). The most promising buffer layer stacks are those with 20 nm of the La1.8Gd0.2Zr2O7 layer or La1.2Gd0.8Zr2O7. Indeed the La2-xGdxZr2O7/La2Zr2O7 films are highly textured{,} similar to a 100 nm-thick La2Zr2O7 layer{,} but their roughness is four times lower. Moreover they contain less and smaller pores in the seed layer than a pure La2Zr2O7 layer. The surface of La2Zr2O7 is also homogenous and crystalline with an orientation deviation from the ideal ?011? (100) direction below 10[degree]. With the 20 nm La2-xGdxZr2O7 seed layers we obtain in the coated conductors an efficiently textured transfer with no gradual degradation from the substrate throughout the superconducting layer. The highest Tc and Jc values are achieved with the La1.8Gd0.2Zr2O7 layer and are{,} respectively{,} 91 K and 1.4 MA cm-2. This trend seems to be due to an improvement of the surface quality of the Ni5%W substrate by the addition of a thin seed layer. Our results offer the potential of the La2-xGdxZr2O7 seed layers as promising alternatives for the classic Ni-5%W/LZO/CeO2/YBCO architectures.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000364826000024 Publication Date 2015-10-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2050-7526;2050-7534; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 5.256 Times cited 4 Open Access
Notes This work was performed within the framework of the EUROTAPES project (FP7-NMP.2011.2.2-1 Grant no. 280438), funded by the European Union. The authors also thank L. Porcar and P. Chometon for superconducting transition temperature and critical current density measurements and P. Odier for fruitful discussion. Approved Most recent IF: 5.256; 2015 IF: 4.696
Call Number c:irua:130181 Serial 3968
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Author Malard, B.; Pilch, J.; Sittner, P.; Delville, R.; Curfs, C.
Title In situ investigation of the fast microstructure evolution during electropulse treatment of cold drawn NiTi wires Type (up) A1 Journal article
Year 2011 Publication Acta materialia Abbreviated Journal Acta Mater
Volume 59 Issue 4 Pages 1542-1556
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Microstructural changes taking place during the heat treatment of cold-worked NiTi alloy are of key interest in shape memory alloy technology, since they are responsible for setting the austenite shape and functional properties of the heat-treated alloy. In this work, microstructural evolution during non-conventional electropulse heat treatment of thin NiTi filaments was investigated in a unique high-speed in situ synchrotron X-ray diffraction experiment with simultaneous evaluation of the tensile force and electrical resistivity of the treated wire. The in situ results provide direct experimental evidence on the evolution of the internal stress and density of defects during fast heating from 20 °C to ∼700 °C. This evidence is used to characterize a sequence of dynamic recovery and recrystallization processes responsible for the microstructure and superelastic functional property changes during the electropulse treatments.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000287265100023 Publication Date 2010-12-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1359-6454; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 5.301 Times cited 48 Open Access
Notes Approved Most recent IF: 5.301; 2011 IF: 3.755
Call Number UA @ lucian @ c:irua:98372 Serial 1583
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Author Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Kahlenberg, V.; Böhm, H.
Title In situ study of the phase transition in Bi2Ti4O11 Type (up) A1 Journal article
Year 1995 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 119 Issue Pages 281-288
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1995TC99800008 Publication Date 2003-01-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.133 Times cited 10 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13325 Serial 1584
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Author Schryvers, D.; Ma, Y.
Title In-situ TEM study of the Ni5Al3 to B2 + L12 decomposition in Ni65Al35 Type (up) A1 Journal article
Year 1995 Publication Materials letters Abbreviated Journal Mater Lett
Volume 23 Issue Pages 105-111
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Homogenised and quenched Ni65Al35 samples were heated and studied in situ in a CM20 electron microscope up to 900 degrees C. The Ni5Al3 phase first forming around 550 degrees C in the quenched L1(0) microtwinned martensite starts to decompose around 800 degrees C yielding B2 precipitates in a twinned L1(2) matrix. The latter twinning is a remainder of the microtwinning in the original room temperature martensite. Also the crystallographic relations between precipitates and matrix can be traced back to the original formation of twinned martensite plates within the austenite. Some aspects of the dynamics of the process are discussed on the basis of snap shots and video recordings.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1995QW53500020 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-577X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.489 Times cited 5 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13166 Serial 1585
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Author Tirry, W.; Schryvers, D.
Title In situ transmission electron microscopy of stress-induced martensite with focus on martensite twinning Type (up) A1 Journal article
Year 2008 Publication Materials science and engineering: part A: structural materials: properties, microstructure and processing Abbreviated Journal Mat Sci Eng A-Struct
Volume 481 Issue Si Pages 420-425
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000255716100087 Publication Date 2007-06-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-5093; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.094 Times cited 22 Open Access
Notes Approved Most recent IF: 3.094; 2008 IF: 1.806
Call Number UA @ lucian @ c:irua:69139 Serial 1586
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Author Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.
Title In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines Type (up) A1 Journal article
Year 2001 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 90 Issue 1 Pages 167-174
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000169361100023 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 97 Open Access
Notes Approved Most recent IF: 2.068; 2001 IF: 2.128
Call Number UA @ lucian @ c:irua:102855 Serial 1587
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Author Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.
Title In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates Type (up) A1 Journal article
Year 2001 Publication Journal of materials research Abbreviated Journal J Mater Res
Volume 16 Issue 3 Pages 701-708
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000167407200011 Publication Date 2008-03-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0884-2914;2044-5326; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.673 Times cited 4 Open Access
Notes Approved Most recent IF: 1.673; 2001 IF: 1.539
Call Number UA @ lucian @ c:irua:103926 Serial 1588
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Author Yusupov, M.; Neyts, E.C.; Verlackt, C.C.; Khalilov, U.; van Duin, A.C.T.; Bogaerts, A.
Title Inactivation of the endotoxic biomolecule lipid A by oxygen plasma species : a reactive molecular dynamics study Type (up) A1 Journal article
Year 2015 Publication Plasma processes and polymers Abbreviated Journal Plasma Process Polym
Volume 12 Issue 12 Pages 162-171
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Reactive molecular dynamics simulations are performed to study the interaction of reactive oxygen species, such as OH, HO2 and H2O2, with the endotoxic biomolecule lipid A of the gram-negative bacterium Escherichia coli. It is found that the aforementioned plasma species can destroy the lipid A, which consequently results in reducing its toxic activity. All bond dissociation events are initiated by hydrogen-abstraction reactions. However, the mechanisms behind these dissociations are dependent on the impinging plasma species, i.e. a clear difference is observed in the mechanisms upon impact of HO2 radicals and H2O2 molecules on one hand and OH radicals on the other hand. Our simulation results are in good agreement with experimental observations.
Address
Corporate Author Thesis
Publisher Place of Publication Weinheim Editor
Language Wos 000350275400005 Publication Date 2014-09-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1612-8850; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.846 Times cited 18 Open Access
Notes Approved Most recent IF: 2.846; 2015 IF: 2.453
Call Number c:irua:123540 Serial 1589
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Author Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J.
Title InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy Type (up) A1 Journal article
Year 1992 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 60 Issue Pages 868-870
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos A1992HD74800027 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.302 Times cited 20 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:4089 Serial 1590
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