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2D semiconductors at the Leuven pulsed field facility”. Bogaerts R, de Keyser A, van Bockstal L, van der Burgt M, van Esch A, Provoost R, Silverans R, Herlach F, Swinnen B, van de Stadt AFW, Koenraad PM, Wolter JH, Karavolas VC, Peeters FM, van de Graaf W, Borghs G, Physicalia magazine 19, 229 (1997)
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Collapse of high field magnetophonon resonance in GaAs-GaAlAs heterojunctions”. Leadley DR, Nicholas RJ, Singleton J, Xu W, Peeters FM, Devreese JT, Perenboom JAAJ, van Bockstal L, Herlach F, Harris JJ, Foxon CT, Physical review letters 73, 589 (1994). http://doi.org/10.1103/PhysRevLett.73.589
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Collective cyclotron modes in high mobility two-dimensional hole systems in GaAs-(Ga,Al)As heterojunctions: 2: experiments at magnetic fields of up to forty Tesla”. Cole BE, Batty W, Singleton J, Chamberlain JM, Li L, van Bockstal L, Imanaka Y, Shimamoto Y, Miura N, Peeters FM, Henini M, Cheng T, Journal of physics : condensed matter 9, 4887 (1997)
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Cyclotron resonance of both magnetopolaron branches for polar and neutral optic phonon coupling in the layer compound InSe”. Nicholas RJ, Watts M, Howell DF, Peeters FM, Wu XG, Devreese JT, van Bockstal L, Herlach F, Langerak CJGM, Singleton J, Chevy A, Pysical review: B 45, 12144 (1992). http://doi.org/10.1103/PhysRevB.45.12144
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Cyclotron-resonance of 2d electrons at Si-\delta-doped InSb layers grown on GaAs”. Van Bockstal L, Mahy M, de Keyser A, Hoeks W, Herlach F, Peeters FM, Van de Graaf W, Borghs G, Physica: B : condensed matter 211, 466 (1995). http://doi.org/10.1016/0921-4526(94)01095-I
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Cyclotron-resonance of 2D electrons at Si-δ-doped InSb layers grown on GaAs”. van Bockstal L, Mahy M, de Keyser A, Hoeks W, Herlach F, Peeters FM, van de Graaf W, Borghs G, Physica: B : condensed matter 211, 455 (1995)
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Disappearance of magnetophonon resonance at high magnetic fields in GaAs-GaAlAs heterojunctions”. Leadley DR, Nicholas RJ, Singleton J, Xu W, Peeters FM, Devreese JT, van Bockstal L, Herlach F, Perenboom JAAJ, Harris JJ, Foxon CT, Surface science : a journal devoted to the physics and chemistry of interfaces 305, 327 (1994). http://doi.org/10.1016/0039-6028(94)90910-5
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Experimental study of the energy band structure of Sc1-xErxAs layers in pulsed magnetic fields”. Bogaerts R, van Esch A, van Bockstal L, Herlach F, Peeters FM, DeRosa F, Palmstrøm CJ, Allen SJ, Physica: B : condensed matter 184, 232 (1993). http://doi.org/10.1016/0921-4526(93)90356-B
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High-field magnetoresistance in GaAs/Ga0.7Al0.3As heterojunctions arising from elastic and inelastic scattering”. Leadley DR, Nicholas RJ, Xu W, Peeters FM, Devreese JT, Singleton J, Perenboom JA, van Bockstal L, Herlach F, Foxon CT, Harris JJ, Physical review : B : condensed matter and materials physics 48, 5457 (1993). http://doi.org/10.1103/PhysRevB.48.5457
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Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs”. de Keyser A, Bogaerts R, Karavolas VC, van Bockstal L, Herlach F, Peeters FM, van de Graaf W, Borghs G, Solid state electronics 40, 395 (1996). http://doi.org/10.1016/0038-1101(96)84617-X
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Magnetic freeze-out induced transition from three- to two-dimensional magnetotransport in Si-δ-doped InSb layers grown on GaAs”. Bogaerts R, de Keyser A, van Bockstal L, Herlach F, Karavolas VC, Peeters FM, Borghs G, , 706 (1995)
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Magnetotransport measurements on thin Ga1-xErxAs epitaxial films in pulsed magnetic fields”. Bogaerts R, van Bockstal L, Herlach F, Peeters FM, DeRosa F, Palmstrøm CJ, Allen SJ, Physica: B : condensed matter 177, 425 (1992). http://doi.org/10.1016/0921-4526(92)90142-F
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Magnetotransport properties of Si-δ-doped InSb layers grown on GaAs”. de Keyser A, Bogaerts R, van Bockstal L, Hoeks W, Herlach F, Karavolas VC, Peeters FM, van de Graaf W, Borghs G, Physica: B : condensed matter 211, 455 (1995). http://doi.org/10.1016/0921-4526(94)01092-F
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Modification of the 2D electronic properties in Si-δ-doped InSb due to surface effects”. de Keyser A, Bogaerts R, van Bockstal L, Herlach F, Karavolas VC, Peeters FM, van de Graaf W, Borghs G, , 383 (1997)
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Resonant magnetopolaron coupling to both polar and neutral optical phonons in the layer compound InSe”. Peeters FM, Wu XG, Devreese JT, Watts M, Nicholas RJ, Howell DF, van Bockstal L, Herlach F, Langerak CJGM, Singleton J, Chevy A, Surface science 263, 654 (1992). http://doi.org/10.1016/0039-6028(92)90429-A
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