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Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution”. de Witte H, de Gendt S, Douglas M, Conard T, Kenis K, Mertens PW, Vandervorst W, Gijbels R s.n., Leuven, page 147 (1999).
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Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on wafer surfaces”. de Witte H, de Gendt S, Douglas M, Conard T, Kenis K, Mertens PW, Vandervorst W, Gijbels R, Journal of the electrochemical society 147, 13 (2000). http://doi.org/10.1149/1.1393457
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Use of grazing emission XRF spectrometry for silicon wafer surface contamination measurements”. de Gendt S, Kenis K, Mertens PW, Heyns MM, Claes M, Van Grieken RE, Bailleul A, Knotter M, de Bokx PK, (1996)
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