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Author Kalitzova, M.; Lebedev, O.I.; Zollo, G.; Gesheva, K.; Vlakhov, E.; Marinov, Y.; Ivanova, T.; pdf  doi
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  Title (up) Dynamics of nanoclustering in Te+ implanted Si after application of high frequency electromagnetic field and thermal annealing Type A1 Journal article
  Year 2008 Publication Applied physics A : materials science & processing Abbreviated Journal Appl Phys A-Mater  
  Volume 91 Issue 3 Pages 515-519  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Heidelberg Editor  
  Language Wos 000255089300027 Publication Date 2008-03-13  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0947-8396;1432-0630; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.455 Times cited Open Access  
  Notes Iuap Vi Approved Most recent IF: 1.455; 2008 IF: 1.884  
  Call Number UA @ lucian @ c:irua:69129 Serial 780  
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Author Kalitzova, M.; Vlakhov, E.; Marinov, Y.; Gesheva, K.; Ignatova, V.A.; Lebedev, O.; Muntele, C.; Gijbels, R. pdf  doi
openurl 
  Title (up) Effect of high-frequency electromagnetic field on Te+-implanted (001) Si</tex> Type A1 Journal article
  Year 2004 Publication Vacuum: the international journal and abstracting service for vacuum science and technology Abbreviated Journal Vacuum  
  Volume 76 Issue 2-3 Pages 325-328  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The analysis of high-frequency electromagnetic field (HFEMF) effects on the microstructure and electrical properties of Te+ implanted (0 0 1) Si is reported. Cross-sectional high-resolution transmission electron microscopy (XHRTEM) demonstrates the formation of Te nanoclusters (NCs) embedded in the Si layer amorphized by implantation (a-Si) at fluences greater than or equal to 1 x 10(16) cm(-2). Post-implantation treatment with 0.45 MHz HFEMF leads to enlargement of Te NCs, their diffusion and accumulation at the a-Si surface and formation of laterally connected extended tellurium structures above the percolation threshold, appearing at an ion fluence of 1 x 10(17) cm(-2). AC electrical conductivity measurements show nearly four orders of magnitude decrease of impedance resistivity in this case, which is in good agreement with the results of our structural studies. The results obtained are discussed in terms of the two-phase isotropic spinodal structure. (C) 2004 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000224890100048 Publication Date 2004-08-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0042-207X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.53 Times cited 2 Open Access  
  Notes Approved Most recent IF: 1.53; 2004 IF: 0.902  
  Call Number UA @ lucian @ c:irua:95105 Serial 814  
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