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Author |
Bizindavyi, J.; Verhulst, A.S.; Smets, Q.; Verreck, D.; Sorée, B.; Groeseneken, G. |
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Title |
Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes |
Type |
A1 Journal article |
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Year |
2018 |
Publication |
IEEE journal of the Electron Devices Society |
Abbreviated Journal |
Ieee J Electron Devi |
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Volume |
6 |
Issue |
1 |
Pages |
633-641 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs). We resolve this discrepancy for highly-doped, direct-bandgap Esaki diodes by successfully calibrating a semi-classical model for high-doping-induced ballistic band-tails tunneling currents at multiple temperatures with two In0.53Ga0.47As Esaki diodes using their SIMS doping profiles, C-V characteristics and their forward-bias current density in the negative differential resistance (NDR) regime. The current swing in the NDR regime is shown not to be linked to the band-tails Urbach energy. We further demonstrate theoretically that the calibrated band-tails contribution is also the dominant band-tails contribution to the subthreshold swing of the corresponding TFETs. Lastly, we verify that the presented procedure is applicable to all direct-bandgap semiconductors by successfully applying it to InAs Esaki diodes in literature. |
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Publisher  |
IEEE, Electron Devices Society |
Place of Publication |
New York, N.Y. |
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Wos |
000435505000013 |
Publication Date |
2018-05-15 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2168-6734 |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.141 |
Times cited |
5 |
Open Access |
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Notes |
; J. Bizindavyi gratefully acknowledges FWO-Vlaanderen for a Strategic Basic Research PhD fellowship. ; |
Approved |
Most recent IF: 3.141 |
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Call Number |
UA @ lucian @ c:irua:152097UA @ admin @ c:irua:152097 |
Serial |
5014 |
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Author |
Sels, D.; Sorée, B.; Groeseneken, G. |
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Title |
2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors |
Type |
A1 Journal article |
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Year |
2010 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
85-88 |
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Keywords |
A1 Journal article; Electron Microscopy for Materials Science (EMAT); |
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Abstract |
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Publisher |
Pisa University Press |
Place of Publication |
Pisa |
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Wos |
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Publication Date |
0000-00-00 |
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Abbreviated Series Title |
14th International Workshop on Computational Electronics |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
978-1-4244-9381-4 |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:91699 |
Serial |
6 |
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