| Home | << 1 >> |
|
| Record | |||||
|---|---|---|---|---|---|
| Author | Bizindavyi, J.; Verhulst, A.S.; Verreck, D.; Sorée, B.; Groeseneken, G. | ||||
| Title | Large variation in temperature dependence of band-to-band tunneling current in tunnel devices | Type | A1 Journal article | ||
| Year | 2019 | Publication | IEEE electron device letters | Abbreviated Journal | Ieee Electr Device L |
| Volume | 40 | Issue | 11 | Pages | 1864-1867 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | The observation of a significant temperature-dependent variation in the ${I}$ – ${V}$ characteristics of tunneling devices is often interpreted as a signature of a trap-assisted-tunneling dominated current. In this letter, we use a ballistic 2D quantum-mechanical simulator, calibrated using the measured temperature-dependent ${I}$ – ${V}$ characteristics of Esaki diodes, to demonstrate that the temperature dependence of band-to-band tunneling (BTBT) current can vary significantly in both Esaki diodes and tunnel FETs. The variation of BTBT current with temperature is impacted by doping concentration, gate voltage, possible presence of a highly-doped pocket at the tunnel junction, and material. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
Publisher  |
Place of Publication | Editor | |||
| Language | Wos | 000496192600040 | Publication Date | 2019-09-05 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0741-3106 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 3.048 | Times cited | Open Access | ||
| Notes | Approved | Most recent IF: 3.048 | |||
| Call Number | UA @ admin @ c:irua:164636 | Serial | 6306 | ||
| Permanent link to this record | |||||