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“The elemental chemistry of sediments in the Krishna River basin, India”. Ramesh R, Subramanian V, Van Grieken R, Van 't dack L, Chemical geology 74, 331 (1989). http://doi.org/10.1016/0009-2541(89)90042-9
Abstract: Composition of bed, core and suspended sediments collected from Krishna River sediments were studied and the observations are discussed in the light of other Indian rivers, world's average river suspended particles, surficial rock and soils. The contents of V, Cr, Co, Ni, Cu and Zn in the suspended particles are higher in the Krishna River than in the world's average, indicating pollution inputs. Suspended sediments are enriched (5 to 10 times) in all the elements considered relative to bed sediments. Downstream profile and metal/Al ratios of the elements indicate that the mobility of elements within the basin is controlled by basin geology, size and mineralogical characteristics. Good correlations observed for a number of elements point out to their common sink in the clay fraction of the sediments. There is no systematic variation with depth for the major elements and most of the elements are considerably higher compared to estuarine or Bay of Bengal sediments.
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1016/0009-2541(89)90042-9
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“Heavy metal distribution in sediments of Krishna River basin, India”. Ramesh R, Subramanian V, Van Grieken R, Environmental geology and water sciences 15, 207 (1990)
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“A nanoscale shape memory oxide”. Zhang J, Ke X, Gou G, Seidel J, Xiang B, Yu P, Liang WI, Minor AM, Chu Yh, Van Tendeloo G, Ren X, Ramesh R;, Nature communications 4, 2768 (2013). http://doi.org/10.1038/ncomms3768
Abstract: Stimulus-responsive shape-memory materials have attracted tremendous research interests recently, with much effort focused on improving their mechanical actuation. Driven by the needs of nanoelectromechanical devices, materials with large mechanical strain, particularly at nanoscale level, are therefore desired. Here we report on the discovery of a large shape-memory effect in bismuth ferrite at the nanoscale. A maximum strain of up to ~14% and a large volumetric work density of ~600±90 J cm−3 can be achieved in association with a martensitic-like phase transformation. With a single step, control of the phase transformation by thermal activation or electric field has been reversibly achieved without the assistance of external recovery stress. Although aspects such as hysteresis, microcracking and so on have to be taken into consideration for real devices, the large shape-memory effect in this oxide surpasses most alloys and, therefore, demonstrates itself as an extraordinary material for potential use in state-of-art nanosystems.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 67
DOI: 10.1038/ncomms3768
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“Ferroelastic switching in a layered-perovskite thin film”. Wang C, Ke X, Wang J, Liang R, Luo Z, Tian Y, Yi D, Zhang Q, Wang J, Han X-F, Van Tendeloo G, Chen L-Q, Nan C-W, Ramesh R, Zhang J, Nature communications 7, 10636 (2016). http://doi.org/10.1038/ncomms10636
Abstract: A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90 degrees within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 40
DOI: 10.1038/ncomms10636
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