| Record |
| Author |
Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
| Title |
Electronic properties of two-dimensional hexagonal germanium |
Type |
A1 Journal article |
| Year |
2010 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
| Volume |
96 |
Issue |
8 |
Pages |
082111,1-082111,3 |
| Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| Abstract |
The electronic properties of two-dimensional hexagonal germanium, so called germanene, are investigated using first-principles simulations. Consistent with previous reports, the surface is predicted to have a poor metallic behavior, i.e., being metallic with a low density of states at the Fermi level. It is found that biaxial compressively strained germanene is a gapless semiconductor with linear energy dispersions near the K pointslike graphene. The calculated Fermi velocity of germanene is almost independent of the strain and is about 1.7×10<sup>6</sup> m/s, quite comparable to the value in graphene. |
| Address |
|
| Corporate Author |
|
Thesis |
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| Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| Language |
|
Wos |
000275027200044 |
Publication Date |
2010-02-25 |
| Series Editor |
|
Series Title |
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Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
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Edition |
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ISSN  |
0003-6951; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
3.411 |
Times cited |
86 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 3.411; 2010 IF: 3.841 |
| Call Number |
UA @ lucian @ c:irua:91716 |
Serial |
1004 |
| Permanent link to this record |
