| Home | << 1 >> |
|
| Record | |||||
|---|---|---|---|---|---|
| Author | van Landuyt, J. | ||||
| Title | The evolution of HVEM application in antwerp | Type | A1 Journal article | ||
| Year | 1991 | Publication | Ultramicroscopy T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan | Abbreviated Journal | Ultramicroscopy |
| Volume | 39 | Issue | 1-4 | Pages  |
287-298 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Elsevier | Place of Publication | Amsterdam | Editor | |
| Language | Wos | A1991GY23100034 | Publication Date | 2002-10-18 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0304-3991; | ISBN | Additional Links | UA library record; WoS full record | |
| Impact Factor | 2.436 | Times cited | Open Access | ||
| Notes | Approved | PHYSICS, APPLIED 47/145 Q2 # | |||
| Call Number | UA @ lucian @ c:irua:95973 | Serial | 3579 | ||
| Permanent link to this record | |||||