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“P-N Junction Passivation in Kesterite Solar Cells by Use of Solution-Processed TiO2 Layer”. Ranjbar S, Hadipour A, Vermang B, Batuk M, Hadermann J, Garud S, Sahayaraj S, Meuris M, Brammertz G, da Cunha AF, Poortmans J, IEEE journal of photovoltaics 7, 1130 (2017). http://doi.org/10.1109/JPHOTOV.2017.2692208
Abstract: In this work, we used a solution-processed TiO2 layer between Cu2ZnSnSe4 and CdS buffer layer to reduce the recombination at the p–n junction. Introducing the TiO2 layer showed a positive impact on VOC but fill factor and efficiency decreased. Using a KCN treatment, we could create openings in the TiO2 layer, as confirmed by transmission electron microscopy measurements. Formation of these openings in the TiO2 layer led to the improvement of the short-circuit current, fill factor, and the efficiency of the modified solar cells.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.712
Times cited: 2
DOI: 10.1109/JPHOTOV.2017.2692208
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“Surface passivation of CIGS solar cells using gallium oxide”. Garud S, Gampa N, Allen TG, Kotipalli R, Flandre D, Batuk M, Hadermann J, Meuris M, Poortmans J, Smets A, Vermang B, Physica status solidi : A : applications and materials science 215, 1700826 (2018). http://doi.org/10.1002/PSSA.201700826
Abstract: This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 8
DOI: 10.1002/PSSA.201700826
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“Wide band gap kesterite absorbers for thin film solar cells: potential and challenges for their deployment in tandem devices”. Vermang B, Brammertz G, Meuris M, Schnabel T, Ahlswede E, Choubrac L, Harel S, Cardinaud C, Arzel L, Barreau N, van Deelen J, Bolt P-J, Bras P, Ren Y, Jaremalm E, Khelifi S, Yang S, Lauwaert J, Batuk M, Hadermann J, Kozina X, Handick E, Hartmann C, Gerlach D, Matsuda A, Ueda S, Chikyow T, Felix R, Zhang Y, Wilks RG, Baer M, Sustainable Energy &, Fuels 3, 2246 (2019). http://doi.org/10.1039/C9SE00266A
Abstract: This work reports on developments in the field of wide band gap Cu2ZnXY4 (with X = Sn, Si or Ge, and Y = S, Se) kesterite thin film solar cells. An overview on recent developments and the current understanding of wide band gap kesterite absorber layers, alternative buffer layers, and suitable transparent back contacts is presented. Cu2ZnGe(S,Se)(4) absorbers with absorber band gaps up to 1.7 eV have been successfully developed and integrated into solar cells. Combining a CdS buffer layer prepared by an optimized chemical bath deposition process with a 1.36 eV band gap absorber resulted in a record Cu2ZnGeSe4 cell efficiency of 7.6%, while the highest open-circuit voltage of 730 mV could be obtained for a 1.54 eV band gap absorber and a Zn(O,S) buffer layer. Employing InZnOx or TiO2 protective top layers on SnO2:In transparent back contacts yields 85-90% of the solar cell performance of reference cells (with Mo back contact). These advances show the potential as well as the challenges of wide band gap kesterites for future applications in high-efficiency and low-cost tandem photovoltaic devices.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1039/C9SE00266A
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“The path towards efficient wide band gap thin-film kesterite solar cells with transparent back contact for viable tandem application”. Khelifi S, Brammertz G, Choubrac L, Batuk M, Yang S, Meuris M, Barreau N, Hadermann J, Vrielinck H, Poelman D, Neyts K, Vermang B, Lauwaert J, Solar Energy Materials And Solar Cells 219, 110824 (2021). http://doi.org/10.1016/j.solmat.2020.110824
Abstract: Wide band gap thin-film kesterite solar cell based on non-toxic and earth-abundant materials might be a suitable candidate as a top cell for tandem configuration in combination with crystalline silicon as a bottom solar cell. For this purpose and based on parameters we have extracted from electrical and optical characterization techniques of Cu2ZnGeSe4 absorbers and solar cells, a model has been developed to describe the kesterite top cell efficiency limitations and to investigate the different possible configurations with transparent back contact for fourterminal tandem solar cell application. Furthermore, we have studied the tandem solar cell performance in view of the band gap and the transparency of the kesterite top cell and back contact engineering. Our detailed analysis shows that a kesterite top cell with efficiency > 14%, a band gap in the range of 1.5-1.7 eV and transparency above 80% at the sub-band gaps photons energies are required to achieve a tandem cell with higher efficiency than with a single silicon solar cell.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 4.784
DOI: 10.1016/j.solmat.2020.110824
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