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Author |
Bliokh, K.Y.; Schattschneider, P.; Verbeeck, J.; Nori, F. |
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Title |
Electron vortex beams in a magnetic field : a new twist on Landau levels and Aharonov-Bohm states |
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A1 Journal article |
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Year |
2012 |
Publication |
Physical review X |
Abbreviated Journal |
Phys Rev X |
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Volume |
2 |
Issue |
4 |
Pages |
041011-41015 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
We examine the propagation of the recently discovered electron vortex beams in a longitudinal magnetic field. We consider both the Aharonov-Bohm configuration with a single flux line and the Landau case of a uniform magnetic field. While stationary Aharonov-Bohm modes represent Bessel beams with flux- and vortex-dependent probability distributions, stationary Landau states manifest themselves as nondiffracting Laguerre-Gaussian beams. Furthermore, the Landau-state beams possess field- and vortex-dependent phases: (i) the Zeeman phase from coupling the quantized angular momentum to the magnetic field and (ii) the Gouy phase, known from optical Laguerre-Gaussian beams. Remarkably, together these phases determine the structure of Landau energy levels. This unified Zeeman-Landau-Gouy phase manifests itself in a nontrivial evolution of images formed by various superpositions of modes. We demonstrate that, depending on the chosen superposition, the image can rotate in a magnetic field with either (i) Larmor, (ii) cyclotron (double-Larmor), or (iii) zero frequency. At the same time, its centroid always follows the classical cyclotron trajectory, in agreement with the Ehrenfest theorem. Interestingly, the nonrotating superpositions reproduce stable multivortex configurations that appear in rotating superfluids. Our results open an avenue for the direct electron-microscopy observation of fundamental properties of free quantum-electron states in magnetic fields. |
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Place of Publication |
College Park, Md |
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Wos |
000311551100001 |
Publication Date |
2012-11-26 |
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ISSN |
2160-3308; |
ISBN |
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Additional Links  |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
12.789 |
Times cited |
130 |
Open Access |
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Notes |
Vortex ECASJO_; |
Approved |
Most recent IF: 12.789; 2012 IF: 6.711 |
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Call Number |
UA @ lucian @ c:irua:105139UA @ admin @ c:irua:105139 |
Serial |
991 |
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Author |
Varykhalov, A.; Marchenko, D.; Sanchez-Barriga, J.; Scholz, M.R.; Verberck, B.; Trauzettel, B.; Wehling, T.O.; Carbone, C.; Rader, O. |
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Title |
Intact dirac cones at broken sublattice symmetry : photoemission study of graphene on Ni and Co |
Type |
A1 Journal article |
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Year |
2012 |
Publication |
Physical review X |
Abbreviated Journal |
Phys Rev X |
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Volume |
2 |
Issue |
4 |
Pages |
041017-10 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The appearance of massless Dirac fermions in graphene requires two equivalent carbon sublattices of trigonal shape. While the generation of an effective mass and a band gap at the Dirac point remains an unresolved problem for freestanding extended graphene, it is well established by breaking translational symmetry by confinement and by breaking sublattice symmetry by interaction with a substrate. One of the strongest sublattice-symmetry-breaking interactions with predicted and measured band gaps ranging from 400 meV to more than 3 eV has been attributed to the interfaces of graphene with Ni and Co, which are also promising spin-filter interfaces. Here, we apply angle-resolved photoemission to epitaxial graphene on Ni (111) and Co(0001) to show the presence of intact Dirac cones 2.8 eV below the Fermi level. Our results challenge the common belief that the breaking of sublattice symmetry by a substrate and the opening of the band gap at the Dirac energy are in a straightforward relation. A simple effective model of a biased bilayer structure composed of graphene and a sublattice-symmetry-broken layer, corroborated by density-functional-theory calculations, demonstrates the general validity of our conclusions. |
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Place of Publication |
College Park, Md |
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Wos |
000312703200001 |
Publication Date |
2012-12-22 |
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ISSN |
2160-3308; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
12.789 |
Times cited |
86 |
Open Access |
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Notes |
; A. V. acknowledges helpful discussions with N. Sandler. This work was supported by SPP 1459 of the Deutsche Forschungsgemeinschaft. B. V. acknowledges support from the Research Foundation Flanders (FWO-Vlaanderen). B. T. and T. O. W. would like to thank the KITP at Santa Barbara for hospitality during the completion of this work. ; |
Approved |
Most recent IF: 12.789; 2012 IF: 6.711 |
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Call Number |
UA @ lucian @ c:irua:105964 |
Serial |
1677 |
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Author |
Wu, S.; Luo, X.; Turner, S.; Peng, H.; Lin, W.; Ding, J.; David, A.; Wang, B.; Van Tendeloo, G.; Wang, J.; Wu, T.; |
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Title |
Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures |
Type |
A1 Journal article |
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Year |
2013 |
Publication |
Physical review X |
Abbreviated Journal |
Phys Rev X |
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Volume |
3 |
Issue |
4 |
Pages |
041027-14 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the unconventional bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices. |
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Place of Publication |
College Park, Md |
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Wos |
000328862400001 |
Publication Date |
2013-12-17 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2160-3308; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
12.789 |
Times cited |
77 |
Open Access |
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Notes |
FWO;FP7;IFOX; Countatoms; Hercules |
Approved |
Most recent IF: 12.789; 2013 IF: 8.463 |
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Call Number |
UA @ lucian @ c:irua:112524 |
Serial |
2365 |
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