| Record |
| Author |
Hoek, M.; Coneri, F.; Poccia, N.; Renshaw Wang, X.; Ke, X.; Van Tendeloo, G.; Hilgenkamp, H. |
| Title |
Strain accommodation through facet matching in La1.85Sr0.15CuO4/Nd1.85Ce0.15CuO4 ramp-edge junctions |
Type |
A1 Journal article |
| Year |
2015 |
Publication |
APL materials |
Abbreviated Journal |
Apl Mater |
| Volume |
3 |
Issue |
3 |
Pages |
086101 |
| Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
| Abstract |
Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd1.85Ce0.15CuO4 and superconducting hole-doped La1.85Sr0.15CuO4 thin films, the latter being the top layer. On the ramp, a new growth mode of La1.85Sr0.15CuO4 with a 3.3° tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed. |
| Address |
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Corporate Author  |
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Thesis |
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| Publisher |
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Place of Publication |
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Editor |
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| Language |
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Wos |
000360656800009 |
Publication Date |
2015-08-03 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
2166-532X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
4.335 |
Times cited |
4 |
Open Access |
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| Notes |
312483 Esteem2; 246791 Countatoms; esteem2_jra2 |
Approved |
Most recent IF: 4.335; 2015 IF: NA |
| Call Number |
c:irua:127690 c:irua:127690 |
Serial |
3163 |
| Permanent link to this record |
