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Author Khotkevych, V.V.; Milošević, M.V.; Bending, S.J.
Title A scanning Hall probe microscope for high resolution magnetic imaging down to 300 mK Type A1 Journal article
Year 2008 Publication The review of scientific instruments Abbreviated Journal Rev Sci Instrum
Volume 79 Issue 12 Pages 123708
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We present the design, construction, and performance of a low-temperature scanning Hall probe microscope with submicron lateral resolution and a large scanning range. The detachable microscope head is mounted on the cold flange of a commercial 3He-refrigerator (Oxford Instruments, Heliox VT-50) and operates between room temperature and 300 mK. It is fitted with a three-axis slip-stick nanopositioner that enables precise in situ adjustment of the probe location within a 6×6×7 mm3 space. The local magnetic induction at the sample surface is mapped with an easily changeable microfabricated Hall probe [typically GsAs/AlGaAs or AlGaAs/InGaAs/GaAs Hall sensors with integrated scanning tunnel microscopy (STM) tunneling tips] and can achieve minimum detectable fields 10 mG/Hz1/2. The Hall probe is brought into very close proximity to the sample surface by sensing and controlling tunnel currents at the integrated STM tip. The instrument is capable of simultaneous tunneling and Hall signal acquisition in surface-tracking mode. We illustrate the potential of the system with images of superconducting vortices at the surface of a Nb thin film down to 372 mK, and also of labyrinth magnetic-domain patterns of an yttrium iron garnet film captured at room temperature.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000262224800032 Publication Date 2008-12-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0034-6748; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.515 Times cited 14 Open Access
Notes Approved (up) Most recent IF: 1.515; 2008 IF: 1.738
Call Number UA @ lucian @ c:irua:75725 Serial 2942
Permanent link to this record
 
 
Author Lemmens, H.; Czank, M.; Van Tendeloo, G.; Amelinckx, S.
Title Defect structure of the low temperature α-cristobalite phase and the cristobalite <-> tridymite transformation in (Si-Ge)O2 Type A1 Journal article
Year 2000 Publication Physics and chemistry of minerals Abbreviated Journal Phys Chem Miner
Volume 27 Issue 6 Pages 386-397
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos 000087959700004 Publication Date 2002-10-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0342-1791;1432-2021; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.521 Times cited 5 Open Access
Notes Approved (up) Most recent IF: 1.521; 2000 IF: 1.513
Call Number UA @ lucian @ c:irua:54725 Serial 622
Permanent link to this record
 
 
Author Schepens, T.; Janssens, K.; Maes, S.; Wildemeersch, D.; Vellinga, J.; Jorens, P.G.; Saldien, V.
Title Respiratory muscle activity after spontaneous, neostigmine- or sugammadex-enhanced recovery of neuromuscular blockade : a double blind prospective randomized controlled trial Type A1 Journal article
Year 2019 Publication BMC anesthesiology Abbreviated Journal Bmc Anesthesiol
Volume 19 Issue 1 Pages 187
Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Antwerp Surgical Training, Anatomy and Research Centre (ASTARC); Laboratory Experimental Medicine and Pediatrics (LEMP)
Abstract Background The use of neostigmine after neuromuscular blockade (NMB) has been associated with postoperative respiratory complications. In previous studies, we found lower diaphragmatic activity after neostigmine reversal of NMB, compared to sugammadex. It is still unclear whether the adequate use of neostigmine guarantees normal respiratory muscle function after NMB. In this study, we wanted to assess the effect of commonly used degrees of NMB and their possible reversal strategies on respiratory muscle activity after the return of normal neuromuscular transmission. Methods This is a randomized, controlled, parallel-group, single-centre, double-blind study in patients scheduled for intracranial surgery at a tertiary academic hospital in Belgium. All participants received target controlled propofol/remifentanil anesthesia and were randomized into one of five groups, receiving either a shallow NMB with no reversal (shallow/saline), a shallow NMB with sugammadex reversal (shallow/sugammadex), a moderate NMB with neostigmine reversal (moderate/neostigmine), a moderate NMB with sugammadex reversal (moderate/sugammadex), or a deep NMB with sugammadex reversal (deep/sugammadex). Primary and secondary outcome parameters were diaphragm and intercostal electromyographic (EMG) activity at the moment of resumed spontaneous breathing activity, defined as a maximal interval of 10 min after the first spontaneous breath. Results For the five groups, a total of 55 patients could be included in the final analysis. Median time of spontaneous breathing analyzed was 5 min (IQR 3-9.5 min). Both the moderate/sugammadex and the moderate/neostigmine groups had lower levels of diaphragm EMG compared to the shallow/sugammadex group. The moderate/neostigmine group had lower levels of intercostal EMG activity compared to the shallow/saline group. Conclusions In this study, the depth of neuromuscular blockade and type of reversal strategy impacts respiratory muscle activity at the moment of resumed spontaneous breathing and recovery of neuromuscular blockade. Both groups that received moderate NMB had lower levels of diaphragm EMG, compared to the shallow NMB group with sugammadex reversal. Compared to the shallow NMB group with no reversal, the moderate NMB with neostigmine reversal group had lower intercostal EMG activity.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000490976800001 Publication Date 2019-10-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1471-2253 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.525 Times cited Open Access
Notes ; This work was supported by an investigator-initiated project grant from Merck & Co (IISP 50678). Merck & Co had no role in study design, data collection and analysis, decision to publish or preparation of the manuscript. ; Approved (up) Most recent IF: 1.525
Call Number UA @ admin @ c:irua:163713 Serial 5816
Permanent link to this record
 
 
Author Clima, S.; Belmonte, A.; Degraeve, R.; Fantini, A.; Goux, L.; Govoreanu, B.; Jurczak, M.; Ota, K.; Redolfi, A.; Kar, G.S.; Pourtois, G.
Title Kinetic and thermodynamic heterogeneity : an intrinsic source of variability in Cu-based RRAM memories Type A1 Journal article
Year 2017 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
Volume 16 Issue 4 Pages 1011-1016
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract <script type='text/javascript'>document.write(unpmarked('The resistive random-access memory (RRAM) device concept is close to enabling the development of a new generation of non-volatile memories, provided that their reliability issues are properly understood. The design of a RRAM operating with extrinsic defects based on metallic inclusions, also called conductive bridge RAM, allows the use of a large spectrum of solid electrolytes. However, when scaled to device dimensions that meet the requirements of the latest technological nodes, the discrete nature of the atomic structure of the materials impacts the device operation. Using density functional theory simulations, we evaluated the migration kinetics of Cu conducting species in amorphous and solid electrolyte materials, and established that atomic disorder leads to a large variability in terms of defect stability and kinetic barriers. This variability has a significant impact on the filament resistance and its dynamics, as evidenced during the formation step of the resistive filament. Also, the atomic configuration of the formed filament can age/relax to another metastable atomic configuration, and lead to a modulation of the resistivity of the filament. All these observations are qualitatively explained on the basis of the computed statistical distributions of the defect stability and on the kinetic barriers encountered in RRAM materials.'));
Address
Corporate Author Thesis
Publisher Place of Publication Place of publication unknown Editor
Language Wos 000417598100004 Publication Date 2017-08-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1569-8025 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.526 Times cited 2 Open Access Not_Open_Access
Notes Approved (up) Most recent IF: 1.526
Call Number UA @ lucian @ c:irua:148569 Serial 4883
Permanent link to this record
 
 
Author Berdiyorov, G.R.; Khalilov, U.; Hamoudi, H.; Neyts, E.C.
Title Effect of chemical modification on electronic transport properties of carbyne Type A1 Journal article
Year 2021 Publication Journal Of Computational Electronics Abbreviated Journal J Comput Electron
Volume Issue Pages
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Using density functional theory in combination with the Green’s functional formalism, we study the effect of surface functionalization on the electronic transport properties of 1D carbon allotrope—carbyne. We found that both hydrogenation and fluorination result in structural changes and semiconducting to metallic transition. Consequently, the current in the functionalization systems increases significantly due to strong delocalization of electronic states along the carbon chain. We also study the electronic transport in partially hydrogenated carbyne and interface structures consisting of pristine and functionalized carbyne. In the latter case, current rectification is obtained in the system with rectification ratio up to 50%. These findings can be useful for developing carbyne-based structures with tunable electronic transport properties.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000617664900001 Publication Date 2021-02-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1569-8025 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.526 Times cited Open Access OpenAccess
Notes Computational resources were provided by the research computing facilities of Qatar Environment and Energy Research Institute. Calculations are also conducted using the Turing HPC infrastructure of the CalcUA core facility of the Universiteit Antwerpen, a division of the Flemish Supercomputer Centre VSC, funded by the Hercules Foundation, the Flemish Government (department EWI) and the University of Antwerp. U. Khalilov gratefully acknowledges financial support from the Fund of Scientific Research Flanders (FWO), Belgium, Grant number 12M1315N. Approved (up) Most recent IF: 1.526
Call Number PLASMANT @ plasmant @c:irua:176169 Serial 6708
Permanent link to this record
 
 
Author Sorée, B.; Magnus, W.
Title Quantized conductance without reservoirs : method of the nonequilibrium statistical operator Type A1 Journal article
Year 2007 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
Volume 6 Issue 1/3 Pages 255-258
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We introduce a generalized non-equilibrium statistical operator (NSO) to study a current-carrying system. The NSO is used to derive a set of quantum kinetic equations based on quantum mechanical balance equations. The quantum kinetic equations are solved self-consistently together with Poissons equation to solve a general transport problem. We show that these kinetic equations can be used to rederive the Landauer formula for the conductance of a quantum point contact, without any reference to reservoirs at different chemical potentials. Instead, energy dissipation is taken into account explicitly through the electron-phonon interaction. We find that both elastic and inelastic scattering are necessary to obtain the Landauer conductance.
Address
Corporate Author Thesis
Publisher Place of Publication S.l. Editor
Language Wos 000208473600062 Publication Date 2007-01-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1569-8025;1572-8137; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.526 Times cited Open Access
Notes Approved (up) Most recent IF: 1.526; 2007 IF: NA
Call Number UA @ lucian @ c:irua:89506 Serial 2769
Permanent link to this record
 
 
Author Sorée, B.; Magnus, W.; Pourtois, G.
Title Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode Type A1 Journal article
Year 2008 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
Volume 7 Issue 3 Pages 380-383
Keywords A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract We derive an analytical model for the electrostatics and the drive current in a silicon nanowire operating in JFET mode. We show that there exists a range of nanowire radii and doping densities for which the nanowire JFET satisfies reasonable device characteristics. For thin nanowires we have developed a self-consistent quantum mechanical model to obtain the electronic structure.
Address
Corporate Author Thesis
Publisher Place of Publication S.l. Editor
Language Wos 000208473800067 Publication Date 2008-02-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1569-8025;1572-8137; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.526 Times cited 70 Open Access
Notes Approved (up) Most recent IF: 1.526; 2008 IF: NA
Call Number UA @ lucian @ c:irua:89504 Serial 107
Permanent link to this record
 
 
Author Slachmuylders, A.; Partoens, B.; Magnus, W.; Peeters, F.M.
Title The effect of dielectric mismatch on excitons and trions in cylindrical semiconductor nanowires Type A1 Journal article
Year 2008 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
Volume Issue Pages
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication S.l. Editor
Language Wos 000208473800066 Publication Date 2008-02-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1569-8025;1572-8137; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.526 Times cited 2 Open Access
Notes Approved (up) Most recent IF: 1.526; 2008 IF: NA
Call Number UA @ lucian @ c:irua:69620 Serial 808
Permanent link to this record
 
 
Author Pourghaderi, M.A.; Magnus, W.; Sorée, B.; de Meyer, K.; Meuris, M.; Heyns, M.
Title General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors Type A1 Journal article
Year 2008 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
Volume 7 Issue 4 Pages 475-484
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Employing the quantum transmitting boundary (QTB) method, we have developed a two-dimensional Schrödinger-Poisson solver in order to investigate quantum transport in nano-scale CMOS transistors subjected to open boundary conditions. In this paper we briefly describe the building blocks of the solver that was originally written to model silicon devices. Next, we explain how to extend the code to semiconducting materials such as germanium, having conduction bands with energy ellipsoids that are neither parallel nor perpendicular to the channel interfaces or even to each other. The latter introduces mixed derivatives in the 2D effective mass equation, thereby heavily complicating the implementation of open boundary conditions. We present a generalized quantum transmitting boundary method that mainly leans on the completeness of the eigenstates of the effective mass equation. Finally, we propose a new algorithm to calculate the chemical potentials of the source and drain reservoirs, taking into account their mutual interaction at high drain voltages. As an illustration, we present the potential and carrier density profiles obtained for a (111) Ge NMOS transistor as well as the ballistic current characteristics.
Address
Corporate Author Thesis
Publisher Place of Publication S.l. Editor
Language Wos 000209032500002 Publication Date 2008-09-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1569-8025;1572-8137; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.526 Times cited 3 Open Access
Notes Approved (up) Most recent IF: 1.526; 2008 IF: NA
Call Number UA @ lucian @ c:irua:89505 Serial 1322
Permanent link to this record
 
 
Author Magnus, W.; Brosens, F.; Sorée, B.
Title Modeling drive currents and leakage currents : a dynamic approach Type A1 Journal article
Year 2009 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
Volume 8 Issue 3/4 Pages 307-323
Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Abstract The dynamics of electrons and holes propagating through the nano-scaled channels of modern semiconductor devices can be seen as a widespread manifestation of non-equilibrium statistical physics and its ruling principles. In this respect both the devices that are pushing conventional CMOS technology towards the final frontiers of Moores law and the upcoming set of alternative, novel nanostructures grounded on entirely new concepts and working principles, provide an almost unlimited playground for assessing physical models and numerical techniques emerging from classical and quantum mechanical non-equilibrium theory. In this paper we revisit the Boltzmann as well as the WignerBoltzmann equation which offers a valuable platform to study transport of charge carriers taking part in drive currents. We focus on a numerical procedure that regained attention recently as an alternative tool to solve the time-dependent Boltzmann equation for inhomogeneous systems, such as the channel regions of field-effect transistors, and we discuss its extension to the WignerBoltzmann equation. Furthermore, we pay attention to the calculation of tunneling leakage currents. The latter typically occurs in nano-scaled transistors when part of the carrier distribution sustaining the drive current is found to tunnel into the gate due the presence of an ultra-thin insulating barrier separating the gate from the channel region. In particular, we discuss the paradox related to the very existence of leakage currents established by electrons occupying quasi-bound states, while the (real) wave functions of the latter cannot carry net currents. Finally, we describe a simple model to resolve the paradox as well as to estimate gate currents provided the local carrier generation rates largely exceed the tunneling rates.
Address
Corporate Author Thesis
Publisher Place of Publication S.l. Editor
Language Wos 000208236100009 Publication Date 2009-09-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1569-8025;1572-8137; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.526 Times cited 4 Open Access
Notes Approved (up) Most recent IF: 1.526; 2009 IF: NA
Call Number UA @ lucian @ c:irua:89503 Serial 2110
Permanent link to this record
 
 
Author Sels, D.; Sorée, B.; Groeseneken, G.
Title Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor Type A1 Journal article
Year 2011 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
Volume 10 Issue 1 Pages 216-221
Keywords A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT)
Abstract In this work we investigate quantum ballistic transport in ultrasmall junctionless and inversion mode semiconducting nanowire transistors within the framework of the self-consistent Schrödinger-Poisson problem. The quantum transmitting boundary method is used to generate open boundary conditions between the active region and the electron reservoirs. We adopt a subband decomposition approach to make the problem numerically tractable and make a comparison of four different numerical approaches to solve the self-consistent Schrödinger-Poisson problem. Finally we discuss the IV-characteristics for small (r≤5 nm) GaAs nanowire transistors. The novel junctionless pinch-off FET or junctionless nanowire transistor is extensively compared with the gate-all-around (GAA) nanowire MOSFET.
Address
Corporate Author Thesis
Publisher Place of Publication S.l. Editor
Language Wos 000300735800021 Publication Date 2011-02-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1569-8025;1572-8137; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.526 Times cited 12 Open Access
Notes ; ; Approved (up) Most recent IF: 1.526; 2011 IF: 1.211
Call Number UA @ lucian @ c:irua:89501 Serial 2772
Permanent link to this record
 
 
Author Masir, M.R.; Peeters, F.M.
Title Scattering of Dirac electrons by a random array of magnetic flux tubes Type A1 Journal article
Year 2013 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
Volume 12 Issue 2 Pages 115-122
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The scattering of two-dimensional (2D) massless electrons as presented in graphene in the presence of a random array of circular magnetic flux tubes is investigated. The momentum relaxation time and the Hall factor are obtained using optical theorem techniques for scattering. Electrons with energy close to those of the Landau levels of the flux tubes exhibit resonant scattering and have a long life-time to reside inside the magnetic flux tube. These resonances appear as sharp structures in the Hall factor and the magneto-resistance.
Address
Corporate Author Thesis
Publisher Place of Publication S.l. Editor
Language Wos 000320044900007 Publication Date 2013-02-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1569-8025;1572-8137; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.526 Times cited 2 Open Access
Notes ; This work was supported by the European Science Foundation (ESF) under the EUROCORES Program Euro-GRAPHENE within the project CONGRAN and the Flemish Science Foundation (FWO-Vl). We acknowledge fruitful discussions with A. Matulis. ; Approved (up) Most recent IF: 1.526; 2013 IF: 1.372
Call Number UA @ lucian @ c:irua:109615 Serial 2950
Permanent link to this record
 
 
Author van der Snickt, G.; Martins, A.; Delaney, J.; Janssens, K.; Zeibel, J.; Duffy, M.; McGlinchey, C.; Van Driel, B.; Dik, J.
Title Exploring a hidden painting below the surface of Rene Magritte's Le Portrait Type A1 Journal article
Year 2016 Publication Applied spectroscopy Abbreviated Journal Appl Spectrosc
Volume 70 Issue 1 Pages 57-67
Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract Two state-of-the-art methods for non-invasive visualization of subsurface (or overpainted) pictorial layers present in painted works of art are employed to study Le portrait, painted by Belgian artist Rene Magritte in 1935. X-ray radiography, a commonly used method for the nondestructive inspection of paintings, had revealed the presence of an underlying figurative composition, part of an earlier Magritte painting entitled La pose enchantee (1927) which originally depicted two full length nude female figures with exaggerated facial features. On the one hand, macroscopic X-ray fluorescence analysis (MA-XRF), a method capable of providing information on the distribution of the key chemical elements present in many artists' pigments, was employed. The ability of the X-rays to penetrate the upper layer of paint enabled the imaging of the facial features of the female figure and provided information on Magritte's palette for both surface and hidden composition. On the other hand, visible and near infrared hyperspectral imaging spectroscopies in transmission mode were also used, especially in the area of the table cloth in order to look through the upper representation and reveal the pictorial layer(s) below. MA-XRF provided elemental information on the pigment distributions in both the final painting and the prior whereas the transmission mode provided information related to preparatory sketches as well as revealing differences between the paints used in both compositions. These results illustrate very well the manner in which the two imaging methods complement each other, both in the sense of providing different types of information on the nature and presence of paint components/pigments and in the sense of being optimally suited to easily penetrate through different types of overpaint.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000368604500007 Publication Date 2016-01-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-7028 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.529 Times cited 13 Open Access
Notes ; GvdS and KJ acknowledge the support of the Fund Inbev-Baillet Latour. JKD acknowledges support from the Andrew Mellon Foundation and the National Science Foundation. BvD and JD acknowledge support from The Netherlands Organisation for Scientific Research (NWO). ; Approved (up) Most recent IF: 1.529
Call Number UA @ admin @ c:irua:131544 Serial 5620
Permanent link to this record
 
 
Author Ignatova, V.A.; van Vaeck, L.; Gijbels, R.; Adams, F.
Title Capabilities and limitations of Fourier transform laser microprobe mass spectrometry for molecular analysis of solids Type A1 Journal article
Year 2002 Publication Vacuum Abbreviated Journal Vacuum
Volume 69 Issue Pages 307-313
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Fourier transform laser microprobe mass spectrometry (FT LMMS) has been developed for the molecular analysis of both organic and inorganic components at the surface of microobjects with the ultimate specificity of high-mass resolution. These capabilities are needed in numerous applications of practical material analysis, such as tracing back anomalies in microobjects. The purpose of this paper is to address representative example from industrial trouble shooting, in which organic and inorganic analytes in a single microparticle have been identified unambiguously. This motivates the research to extend the methodology towards quantification. This paper deals with the fundamental aspect of information depth, specifically for inorganic molecular adduct ions. Finally, data will show the quantitative capabilities of FT LMMS. A suitable methodology for the preparation of reference specimens has allowed the empirical calibration of the response as a function of the local concentration to be achieved.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000180739000050 Publication Date 2002-12-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0042-207X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.53 Times cited 4 Open Access
Notes Approved (up) Most recent IF: 1.53; 2002 IF: 0.723
Call Number UA @ lucian @ c:irua:43192 Serial 274
Permanent link to this record
 
 
Author Bogaerts, A.; Gijbels, R.
Title Numerical modelling of gas discharge plasmas for various applications Type A1 Journal article
Year 2003 Publication Vacuum: surface engineering, surface instrumentation & vacuum technology Abbreviated Journal Vacuum
Volume 69 Issue Pages 37-52
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Gas discharge plasmas are used for a wide range of applications. To improve our understanding about gas discharges, which is necessary to obtain good results in the various application fields, we perform numerical modelling of gas discharge plasmas. Various kinds of modelling approaches, for various types of gas discharges, are being used in our group. In this paper, some examples of this modelling work are outlined. (C) 2002 Elsevier Science Ltd. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000180739000006 Publication Date 2002-12-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0042-207X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.53 Times cited 16 Open Access
Notes Approved (up) Most recent IF: 1.53; 2003 IF: 0.612
Call Number UA @ lucian @ c:irua:40194 Serial 2401
Permanent link to this record
 
 
Author Kalitzova, M.; Vlakhov, E.; Marinov, Y.; Gesheva, K.; Ignatova, V.A.; Lebedev, O.; Muntele, C.; Gijbels, R.
Title Effect of high-frequency electromagnetic field on Te+-implanted (001) Si</tex> Type A1 Journal article
Year 2004 Publication Vacuum: the international journal and abstracting service for vacuum science and technology Abbreviated Journal Vacuum
Volume 76 Issue 2-3 Pages 325-328
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The analysis of high-frequency electromagnetic field (HFEMF) effects on the microstructure and electrical properties of Te+ implanted (0 0 1) Si is reported. Cross-sectional high-resolution transmission electron microscopy (XHRTEM) demonstrates the formation of Te nanoclusters (NCs) embedded in the Si layer amorphized by implantation (a-Si) at fluences greater than or equal to 1 x 10(16) cm(-2). Post-implantation treatment with 0.45 MHz HFEMF leads to enlargement of Te NCs, their diffusion and accumulation at the a-Si surface and formation of laterally connected extended tellurium structures above the percolation threshold, appearing at an ion fluence of 1 x 10(17) cm(-2). AC electrical conductivity measurements show nearly four orders of magnitude decrease of impedance resistivity in this case, which is in good agreement with the results of our structural studies. The results obtained are discussed in terms of the two-phase isotropic spinodal structure. (C) 2004 Elsevier Ltd. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000224890100048 Publication Date 2004-08-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0042-207X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.53 Times cited 2 Open Access
Notes Approved (up) Most recent IF: 1.53; 2004 IF: 0.902
Call Number UA @ lucian @ c:irua:95105 Serial 814
Permanent link to this record
 
 
Author Govaerts, K.; Partoens, B.; Lamoen, D.
Title Extended homologous series of Sn–O layered systems: A first-principles study Type A1 Journal article
Year 2016 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 243 Issue 243 Pages 36-43
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Abstract Apart from the most studied tin-oxide compounds, SnO and SnO2, intermediate states have been claimed to exist for more than a hundred years. In addition to the known homologous series (Seko et al., Phys. Rev. Lett. 100, 045702 (2008)), we here predict the existence of several new compounds with an O concentration between 50 % (SnO) and 67 % (SnO2). All these intermediate compounds are constructed from removing one or more (101) oxygen layers of SnO2. Since the van der Waals (vdW) interaction is known to be important for the Sn-Sn interlayer distances, we use a vdW-corrected functional, and compare these results with results obtained with PBE and hybrid functionals. We present the electronic properties of the intermediate structures and we observe a decrease of the band gap when (i) the O concentration increases and (ii) more SnO-like units are present for a given concentration. The contribution of the different atoms to the valence and conduction band is also investigated.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000381544200007 Publication Date 2016-06-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 10 Open Access
Notes We gratefully acknowledge financial support from a GOA fund of the University of Antwerp. K.G. thanks the University of Antwerp for a PhD fellowship. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center) and the HPC infrastructure of the University of Antwerp (CalcUA), both funded by the Hercules Foundation and the Flemish Government – department EWI. Approved (up) Most recent IF: 1.554
Call Number c:irua:134037 Serial 4085
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Author Petrovic, M.D.; Peeters, F.M.
Title Quantum transport in graphene Hall bars : effects of side gates Type A1 Journal article
Year 2017 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 257 Issue 257 Pages 20-26
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau levels, and creates new propagating states in the Landau spectrum (i.e. snake states). The existence of these new states leads to an interesting modification of the bend and Hall resistances, with new quantizing plateaus appearing in close proximity of the Landau levels. The electron guiding in this system can be understood by studying the current density profiles of the incoming and outgoing modes. From the fact that guided electrons fully transmit without any backscattering (similarly to edge states), we are able to analytically predict the values of the quantized resistances, and they match the resistance data we obtain with our numerical (tight-binding) method. These insights in the electron guiding will be useful in predicting the resistances for other side-gate configurations, and possibly in other system geometries, as long as there is no backscattering of the guided states.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000401101400005 Publication Date 2017-04-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record
Impact Factor 1.554 Times cited Open Access
Notes ; This work was supported by the Methusalem programme of the Flemish government. One of us (F. M. Peeters) acknowledges correspondence with K. Novoselov. ; Approved (up) Most recent IF: 1.554
Call Number UA @ lucian @ c:irua:143761 Serial 4604
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Author Zhao, C.X.; Xu, W.; Dong, H.M.; Yu, Y.; Qin, H.; Peeters, F.M.
Title Enhancement of plasmon-photon coupling in grating coupled graphene inside a Fabry-Perot cavity Type A1 Journal article
Year 2018 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 280 Issue 280 Pages 45-49
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We present a theoretical investigation of the plasmon-polariton modes in grating coupled graphene inside a Fabry-Perot cavity. The cavity or photon modes of the device are determined by the Finite Difference Time Domain (FDTD) simulations and the corresponding plasmon-polariton modes are obtained by applying a many-body self-consistent field theory. We find that in such a device structure, the electric field strength of the incident electromagnetic (EM) field can be significantly enhanced near the edges of the grating strips. Thus, the strong coupling between the EM field and the plasmons in graphene can be achieved and the features of the plasmon-polariton oscillations in the structure can be observed. It is found that the frequencies of the plasmon-polariton modes are in the terahertz (THz) bandwidth and depend sensitively on electron density which can be tuned by applying a gate voltage. Moreover, the coupling between the cavity photons and the plasmons in graphene can be further enhanced by increasing the filling factor of the device. This work can help us to gain an in-depth understanding of the THz plasmonic properties of graphene-based structures.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000439059600008 Publication Date 2018-06-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 1 Open Access
Notes ; This work is supported by the National Natural Science Foundation of China (Grand No. 11604192 and Grant No. 11574319); the Center of Science and Technology of Hefei Academy of Science; the Ministry of Science and Technology of China (Grant No. 2011YQ130018); Department of Science and Technology of Yunnan Province; Chinese Academy of Sciences. ; Approved (up) Most recent IF: 1.554
Call Number UA @ lucian @ c:irua:152369UA @ admin @ c:irua:152369 Serial 5024
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Author Wang, W.; Li, L.; Kong, X.; Van Duppen, B.; Peeters, F.M.
Title T4,4,4-graphyne : a 2D carbon allotrope with an intrinsic direct bandgap Type A1 Journal article
Year 2019 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 293 Issue 293 Pages 23-27
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract A novel two-dimensional (2D) structurally stable carbon allotrope is proposed using first-principles calculations, which is a promising material for water purification and for electronic devices due to its unique porous structure and electronic properties. Rectangular and hexagonal rings are connected with acetylenic linkages, forming a nanoporous structure with a pore size of 6.41 angstrom, which is known as T-4,T-4,T-4-graphyne. This 2D sheet exhibits a direct bandgap of 0.63 eV at the M point, which originates from the p(z)( )atomic orbitals of carbon atoms as confirmed by a tight-binding model. Importantly, T-4,T-4,T-4-graphyne is found to be energetically more preferable than the experimentally realized beta-graphdiyne, it is dynamically stable and can withstand temperatures up to 1500 K.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000460909600005 Publication Date 2019-02-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 10 Open Access
Notes ; This work was supported by National Natural Science Foundation of China (Grant Nos. 11404214 and 11455015), the China Scholarship Council (CSC), the Science and Technology Research Foundation of Jiangxi Provincial Education Department (Grant Nos. GJJ180868 and GJJ161062) the Fonds Wetenschappelijk Onderzoek (FWO-V1), and the FLAG-ERA project TRANS2DTMD. BVD was supported by the Research Foundation – Flanders (FWO-V1) through a postdoctoral fellowship. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center), funded by the Research Foundation – Flanders (FWO) and the Flemish Government department EWI. ; Approved (up) Most recent IF: 1.554
Call Number UA @ admin @ c:irua:158503 Serial 5234
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Author Saniz, R.; Bekaert, J.; Partoens, B.; Lamoen, D.
Title First-principles study of defects at Σ3 grain boundaries in CuGaSe2 Type A1 Journal article
Year 2021 Publication Solid State Communications Abbreviated Journal Solid State Commun
Volume Issue Pages 114263
Keywords A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Abstract We present a first-principles computational study of cation–Se 3 (112) grain boundaries in CuGaSe. We discuss the structure of these grain boundaries, as well as the effect of native defects and Na impurities on their electronic properties. The formation energies show that the defects will tend to form preferentially at the grain boundaries, rather than in the grain interiors. We find that in Ga-rich growth conditions Cu vacancies as well as Ga at Cu and Cu at Ga antisites are mainly responsible for having the equilibrium Fermi level pinned toward the middle of the gap, resulting in carrier depletion. The Na at Cu impurity in its +1 charge state contributes to this. In Ga-poor growth conditions, on the other hand, the formation energies of Cu vacancies and Ga at Cu antisites are comparatively too high for any significant influence on carrier density or on the equilibrium Fermi level position. Thus, under these conditions, the Cu at Ga antisites give rise to a -type grain boundary. Also, their formation energy is lower than the formation energy of Na at Cu impurities. Thus, the latter will fail to act as a hole barrier preventing recombination at the grain boundary, in contrast to what occurs in CuInSe grain boundaries. We also discuss the effect of the defects on the electronic properties of bulk CuGaSe, which we assume reflect the properties of the grain interiors.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000652668500013 Publication Date 2021-03-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 1 Open Access OpenAccess
Notes Fwo; We acknowledge the financial support of FWO-Vlaanderen, Belgium through project G.0150.13. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center) and the HPC infrastructure of the University of Antwerp (CalcUA), both funded by FWO-Vlaanderen and the Flemish Government-department EWI. Approved (up) Most recent IF: 1.554
Call Number EMAT @ emat @c:irua:176544 Serial 6703
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Author Chaves, A.; Peeters, F.M.
Title Tunable effective masses of magneto-excitons in two-dimensional materials Type A1 Journal article
Year 2021 Publication Solid State Communications Abbreviated Journal Solid State Commun
Volume 334 Issue Pages 114371
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Excitonic properties of Ge2H2 and Sn2H2, also known as Xanes, are investigated within the effective mass model. A perpendicularly applied magnetic field induces a negative shift on the exciton center-of-mass kinetic energy that is approximately quadratic with its momentum, thus pushing down the exciton dispersion curve and flattening it. This can be interpreted as an increase in the effective mass of the magneto-exciton, tunable by the field intensity. Our results show that in low effective mass two-dimensional semiconductors, such as Xanes, the applied magnetic field allows one to tune the magneto-exciton effective mass over a wide range of values.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000670329600003 Publication Date 2021-05-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record
Impact Factor 1.554 Times cited Open Access Not_Open_Access
Notes Approved (up) Most recent IF: 1.554
Call Number UA @ admin @ c:irua:179762 Serial 7037
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Author Fomin, V.M.; Misko, V.R.; Devreese, J.T.; Moshchalkov, V.V.
Title On the superconducting phase boundary for a mesoscopic square loop Type A1 Journal article
Year 1997 Publication Solid State Communications Abbreviated Journal Solid State Commun
Volume 101 Issue Pages 303-308
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos A1997WB80400001 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 39 Open Access
Notes Approved (up) Most recent IF: 1.554; 1997 IF: 1.323
Call Number UA @ lucian @ c:irua:20355 Serial 2456
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Author De Meulenaere, P.; Mommaert, C.; Van Tendeloo, G.
Title Short-range order in phase segregation systems Type A1 Journal article
Year 1997 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 102 Issue 9 Pages 687-690
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Spin systems on an f.c.c.-lattice which exhibit phase segregation are studied by means of Monte Carlo simulations. Short-range order, both above and below the segregation temperature, is observed. Experimental evidence for short range order in Ti-V is provided by electron diffraction.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos A1997WX40300011 Publication Date 2003-05-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.554 Times cited Open Access
Notes Approved (up) Most recent IF: 1.554; 1997 IF: 1.323
Call Number UA @ lucian @ c:irua:21429 Serial 2997
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Author Misko, V.R.; Fomin, V.M.; Devreese, J.T.; Moshchalkov, V.V.
Title On the Ginzburg-Landau analysis of a mixed s-dx2-y2-wave superconducting mesoscopic square Type A1 Journal article
Year 2000 Publication Solid State Communications Abbreviated Journal Solid State Commun
Volume 114 Issue Pages 499-504
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000086679000011 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 2 Open Access
Notes Approved (up) Most recent IF: 1.554; 2000 IF: 1.271
Call Number UA @ lucian @ c:irua:29033 Serial 2436
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Author Geuens, P.; Lebedev, O.I.; Van Tendeloo, G.
Title Reconstruction of the La0.9Sr0.1MnO3-SrTiO3 interface by quantitative high-resolution electron microscopy Type A1 Journal article
Year 2000 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 116 Issue 12 Pages 643-648
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000165546500001 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 2 Open Access
Notes Approved (up) Most recent IF: 1.554; 2000 IF: 1.271
Call Number UA @ lucian @ c:irua:54749 Serial 2845
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Author Satto, S.; Jansen, J.; Lexcellent, C.; Schryvers, D.
Title Structure refinement of L21 Cu-Zn-Al austenite, using dynamical electron diffraction data Type A1 Journal article
Year 2000 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 116 Issue Pages 273-277
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000089747900008 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 7 Open Access
Notes Approved (up) Most recent IF: 1.554; 2000 IF: 1.271
Call Number UA @ lucian @ c:irua:48374 Serial 3317
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Author Nikolaev, A.V.; Michel, K.H.
Title Electronic structure and electric quadrupoles of a polymerized chain in solid AC60 Type A1 Journal article
Year 2001 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 117 Issue Pages 739-743
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000167538300010 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 10 Open Access
Notes Approved (up) Most recent IF: 1.554; 2001 IF: 1.381
Call Number UA @ lucian @ c:irua:36881 Serial 1009
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Author Chang, K.; Peeters, F.M.
Title Spin-polarized tunneling through diluted magnetic semiconductor barriers Type A1 Journal article
Year 2001 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 120 Issue Pages 181-184
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000171685400001 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 35 Open Access
Notes Approved (up) Most recent IF: 1.554; 2001 IF: 1.381
Call Number UA @ lucian @ c:irua:37303 Serial 3099
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Author Ivanov, V.A.; van den Broek, M.; Peeters, F.M.
Title Strongly interacting σ-electrons and MgB2 superconductivity Type A1 Journal article
Year 2001 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 120 Issue Pages 53-57
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000171221900001 Publication Date 2002-10-31
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.554 Times cited 5 Open Access
Notes Approved (up) Most recent IF: 1.554; 2001 IF: 1.381
Call Number UA @ lucian @ c:irua:37304 Serial 3187
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