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“Ab initio computation of the mean inner Coulomb potential of amorphous carbon structures”. Schowalter M, Titantah JT, Lamoen D, Kruse P, Applied physics letters 86, 112102 (2005). http://doi.org/10.1063/1.1885171
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“Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold”. Schowalter M, Rosenauer A, Lamoen D, Kruse P, Gerthsen D, Applied Physics Letters 88, Artn 232108 (2006). http://doi.org/10.1063/1.2210453
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“Aromatic ring generation as a dust precursor in acetylene discharges”. de Bleecker K, Bogaerts A, Goedheer W, Applied physics letters 88, 151501 (2006). http://doi.org/10.1063/1.2193796
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“Comment on “Chiral tunneling in trilayer graphene&rdquo, [Appl. Phys. Lett. 100, 163102 (2012)]”. Van Duppen B, Peeters FM, Applied physics letters 101, 226101 (2012). http://doi.org/10.1063/1.4767221
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“Comment on “Transverse rectification in superconducting thin films with arrays of asymmetric defects””. Silhanek AV, van de Vondel J, Moshchalkov VV, Metlushko V, Ilic B, Misko VR, Peeters FM, Applied physics letters 92 (2008). http://doi.org/10.1063/1.2920078
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“Critical size for exchange bias in ferromagnetic-antiferromagnetic particles”. Dobrynin AN, Ievlev DN, Temst K, Lievens P, Margueritat J, Gonzalo J, Afonso CN, Zhou SQ, Vantomme A, Piscopiello E, Van Tendeloo G, Applied physics letters 87, 012501 (2005). http://doi.org/10.1063/1.1978977
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“The dominant role of impurities in the composition of high pressure noble gas plasmas”. Martens T, Bogaerts A, Brok WJM, van Dijk J, Applied physics letters 92, 041504 (2008). http://doi.org/10.1063/1.2839613
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“Doping of interfaces in (La0.7Sr0.3MnO3)1-x:(MgO)x composite films”. Köster S, Moshnyaga V, Samwer K, Lebedev OI, Van Tendeloo G, Shapoval O, Belenchuk A, Applied physics letters 81, 1648 (2002). http://doi.org/10.1063/1.1503849
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“Effect of a metallic gate on the energy levels of a shallow donor”. Slachmuylders AF, Partoens B, Peeters FM, Magnus W, Applied physics letters 92, 083104 (2008). http://doi.org/10.1063/1.2888742
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“Effect of hydrogen on the growth of thin hydrogenated amorphous carbon films from thermal energy radicals”. Neyts E, Bogaerts A, van de Sanden MCM, Applied physics letters 88, 141922 (2006). http://doi.org/10.1063/1.2193803
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“Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering”. Kálna K, Mo×ko M, Peeters FM, Applied physics letters 68, 117 (1996)
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“First-principles calculations of the mean inner Coulomb potential for sphalerite type II.VI semiconductors”. Schowalter M, Lamoen D, Kruse P, Gerthsen D, Rosenauer A, Applied Physics Letters 85, 4938 (2004). http://doi.org/10.1063/1.1823598
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“Flowerlike ZnO nanocones and nanowires: preparation, structure, and luminescence”. Du GH, Xu F, Yuan ZY, Van Tendeloo G, Applied physics letters 88, 243101 (2006). http://doi.org/10.1063/1.2211007
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“Fluxonic cellular automata”. Milošević, MV, Berdiyorov GR, Peeters FM, Applied physics letters 91, 212501 (2007). http://doi.org/10.1063/1.2813047
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“Formation of metallic In in InGaN/GaN multiquantum wells”. van Daele B, Van Tendeloo G, Jacobs K, Moerman I, Leys M, Applied physics letters 85, 4379 (2004). http://doi.org/10.1063/1.1815054
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“Ga segregation in DyBa2Cu3O7-\delta/PrBa2Cu3-xGaxO7-\delta/DyBa2Cu3O7-\delta ramp-type Josephson junctions”. Verbist K, Lebedev OI, Van Tendeloo G, Verhoeven MAJ, Rijnders AJHM, Blank DHA, Rogalia H, Applied physics letters 70, 1167 (1997)
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“Graphene-based resonant-tunneling structures”. Milton Pereira J, Vasilopoulos P, Peeters FM, Applied physics letters 90, 132122 (2007). http://doi.org/10.1063/1.2717092
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“Hall magnetometer in the ballistic regime”. Peeters FM, Li XQ, Applied physics letters 72, 572 (1998). http://doi.org/10.1063/1.120759
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“Hall potentiometer in the ballistic regime”. Baelus BJ, Peeters FM, Applied physics letters 74, 1600 (1999). http://doi.org/10.1063/1.123629
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“High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing”. Frangis N, van Landuyt J, Lartiprete R, Martelli S, Borsella E, Chiussi S, Castro J, Leon B, Applied physics letters 72, 2877 (1998). http://doi.org/10.1063/1.121487
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“Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays”. Cloetens P, Ludwig W, Baruchel J, van Dyck D, van Landuyt J, Guigay JP, Schlenker M, Applied physics letters 75, 2912 (1999). http://doi.org/10.1063/1.125225
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“Hybrid ferromagnetic/semiconductor Hall effect device”. Reijniers J, Peeters FM, Applied physics letters 73, 357 (1998). http://doi.org/10.1063/1.121833
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“InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy”. Dobbelaere W, de Boeck J, Heremans P, Mertens R, Borghs G, Luyten W, van Landuyt J, Applied physics letters 60, 868 (1992). http://doi.org/10.1063/1.106490
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“InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy”. Dobbelaere W, de Boeck J, Heremans P, Mertens R, Borghs G, Luyten W, van Landuyt J, Applied physics letters 600, 3256 (1992). http://doi.org/10.1063/1.106711
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“Influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots”. Mlinar V, Peeters FM, Applied physics letters 89, 1 (2006). http://doi.org/10.1063/1.2424435
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“Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport”. Yang W, Chang K, Wu XG, Zheng HZ, Peeters FM;, Applied physics letters 89 (2006). http://doi.org/10.1063/1.2357888
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“Measurement of the mean inner potential of ZnO nanorods by transmission electron holography”. Müller E, Kruse P, Gerthsen D, Schowalter M, Rosenauer A, Lamoen D, Kling R, Waag A, Applied Physics Letters 86 (2005). http://doi.org/10.1063/1.1901820
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“Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors”. Van Daele B, Van Tendeloo G, Derluyn J, Shrivastava P, Lorenz A, Leys MR, Germain M;, Applied physics letters 89, Artn 201908 (2006). http://doi.org/10.1063/1.2388889
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“Nonlinear transport phenomena in a triangular quantum well”. Kastalsky A, Peeters FM, Chan WK, Florez LT, Harbison JP, Applied physics letters 59, 1708 (1991)
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“Optical properties of (In,Ga)As capped InAs quantum dots grown on [11k] substrates”. Mlinar V, Peeters FM, Applied physics letters 91, 021910 (2007). http://doi.org/10.1063/1.2753745
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